HSMC HSD882S Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage
regulator, and relay driver.
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current............................................................................................................... 3 A
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 30 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=30V, IE=0
IEBO - - 1 uA VEB=3V, IC=0
*VCE(sat) - - 0.5 V IC=2A, IB=200mA
*VBE(sat) - - 2 V IC=2A, IB=200mA
*hFE1 30 - - VCE=2V, IC=20mA
*hFE2 100 - 500 VCE=2V, IC=1A
fT - 90 - MHz VCE=5V, IC=0.1A, f=100MHz
Cob - 45 - pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank Q P E
Range 100-200 160-320 250-500
HSD882S HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2002.01.25
Page No. : 2/4
1000
125oC
25oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Current- IC (mA)
75oC
Sat uration Voltage & Collect or Cur rent
1000
Current Gain & Coll ector Curren t
75oC
1000
100
Satur ation Voltage ( m V)
125oC
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
CE(sat)
V
@ IC=10I
Sat urati on Voltage & Collector Curren t
1000
Sat urati on Voltage & Col lector Current
75oC
B
75oC
100
125oC
Saturation Voltage (mV)
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
CE(sat)
V
@ IC=40I
Sat urati on Voltage & Col lector Current
10000
1000
Saturation Voltage (mV)
100
25oC
125oC
1 10 100 1000 10000
Collector Current- IC (mA)
75oC
BE(sat)
V
@ IC=10I
100
Saturat ion Volt age ( m V)
B
10
1 10 100 1000 10000
125oC
Collector Current- IC (mA)
25oC
CE(sat)
V
@ IC=20I
B
Capacita nce & Rev erse-Biased Voltage
100
Cob
Capacitance (pF)
B
10
0.1 1 10 100
Reverse-Biased Vol tage (V)
HSD882S HSMC Product Specification
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