HSMC HSD882 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD882 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Spec. No. : HE6004
Issued Date : 1998.03.15
Revised Date : 2002.01.25
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 1 W
Total Power Dissipation (Tc=25°C)..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 30 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC)...................................................................................................... 3 A
IC Collector Current (Pulse) ................................................................................................. 7 A
IB Base Current (DC)......................................................................................................... 0.6 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA
BVCEO 30 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 1 uA VCB=30V
IEBO - - 1 uA VEB=3V
*VCE(sat) - 0.3 0.5 V IC=2A, IB=0.2A
*VBE(sat) - 1 2 V IC=2A, IB=0.2A
*hFE1 30 150 - IC=20mA, VCE=2V
*hFE2 100 200 500 IC=1A, VCE=2V
fT - 90 - MHz IC=0.1A, VCE=5V
Cob - 45 - pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 250-500
HSD882 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6004
Issued Date : 1998.03.15
Revised Date : 2002.01.25
Page No. : 2/4
1000
125oC
25oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Current- IC (mA)
75oC
Sat uration Voltage & Collect or Cur rent
1000
Current Gain & Coll ector Curren t
75oC
1000
100
Satur ation Voltage ( m V)
125oC
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
CE(sat)
V
@ IC=10I
Sat urati on Voltage & Collector Curren t
1000
Sat urati on Voltage & Col lector Current
75oC
B
75oC
100
125oC
Saturation Voltage (mV)
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
CE(sat)
V
@ IC=40I
Sat urati on Voltage & Col lector Current
10000
1000
Saturation Voltage (mV)
100
25oC
125oC
1 10 100 1000 10000
Collector Current- IC (mA)
75oC
BE(sat)
V
@ IC=10I
100
Saturat ion Volt age ( m V)
B
10
1 10 100 1000 10000
100
10
Capacitance (pF)
B
1
0.1 1 10 100
125oC
Collector Current- IC (mA)
Capacitance & Rev erse-Biased Voltage
Reverse-Biased Vol tage (V)
25oC
CE(sat)
V
Cob
@ IC=20I
B
HSD882 HSMC Product Specification
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