HSMC HSD879D Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 1/3
Features
• Charger-up time is about 1 ms faster than of a germanium transistor.
• Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.4 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current .............................................................................................................. 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co ndition
BVCEO 10 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICBO - - 100 nA VCB=20V
IEBO - - 100 nA VBE=4V
*VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA
*VBE - 0.83 1.5 V VCE=-1V, IC=-2A
*hFE 140 210 - VCE=2V, IC=3A
fT - 200 - MHZ VCE=10V, IC=50mA
Cob - 30 - pF VCB=10V, f=1KHZ
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HSD879D HSMC Product Specification
HI-SINCERITY
y
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 2/3
1000
Curren t Gain & Collector C urrent
125oC
75oC
25oC
hFE
hFE @ VCE=2V
100
1 10 100 1000 10000
Collector Current-IC (mA)
ON Vol tage & Coll ect or Cur r ent
10.0
1000
100
Saturation Voltage (mV)
10
1000
100
Sat urati on Voltage & Col lector C urr ent
CE(sat)
V
1 10 100 1000 10000
B
@ IC=50I
75oC
125oC
Collector Current-IC (mA)
25oC
Cut off Frequency & Collector Current
VCE=10V
1.0
ON Voltage
BE(on)
V
@ VCE=2V
0.1
1 10 100 1000 10000
100
10
Capacitance (pF)
Capacitance & Reverse-Biased Voltage
Collector Current
Cob
Cutoff Fr eq uenc
10
1
1 10 100 1000
100
(mA)
10
C
1
Collector Cu r rent -I
Collector Curren t
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1S
1
1 10 100
Rev e r se Biased Vol tage (V)
0.1
1 10 100
Forwar d Voltage-VCE (V)
HSD879D HSMC Product Specification
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