HSMC HSD879 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HSD879

SILICON NPN EPITAXIAL TYPE TRANSISTOR

Description

For 1.5V and 3v electronic flash use.

Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3

Features

• Charger-up time is about 1 ms faster than of a germanium transistor

• Small saturation voltage can bring less power dissipation and flashing times

TO-92

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 750 mW

• Maximum Voltages and Currents (Ta=25°C)

BVCBO Collector to Base Voltage....................................................................................... 30 V

BVCEX Collector to Emitter Voltage.................................................................................... 20 V

BVCEO Collector to Emitter Voltage.................................................................................... 10 V

BVEBO Emitter to Base Voltage............................................................................................ 6 V

IC Collector Current............................................................................................................... 3 A

IC Collector Current (Pluse) .................................................................................................. 5 A

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Co ndition

BVCEO 10 - - V IC=1mA
BVEBO 6 - - V IE=10uA

BVCBO 30 - - V IC=10uA

BVCEX 20 - - V IC=1mA, VBE=3V

ICBO - - 100 nA VCB=20V
IEBO - - 100 nA VBE=4V

*hFE 140 210 400 VCE=2V, IC=3A

*VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA

fT - 200 - MHZ VCE=10V, IC=50mA

Cob - 30 - pF VCB=10V, f=1MHZ

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

HSD879 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 2/3

1000

Curren t Gain & Collector C urrent

125oC

75oC

25oC

hFE

hFE @ VCE=2V

100

1 10 100 1000 10000

1000

100

Cut o ff Frequency & Coll ector Current

Collector Current-IC (mA)

VCE=10V

1000

100

Saturation Voltage (mV)

10

100

Sat urati on Voltage & Col lector C urr ent

CE(sat)

V

1 10 100 1000 10000

B

@ IC=50I

75oC

125oC

Collector Current-IC (mA)

25oC

Capacitance & Reverse-B iased Voltage

Cob

10

Cutoff Frequency (MHz)...

1

1 10 100 1000

Collector Current ( mA)

Power Derating

800

700

600

500

400

300

200

Power Dis s ip ation- P D ( mW)

100

10

Capacitance (pF)

1

1 10 100

Reverse Biased Vol t age ( V)

0

0 50 100 150 200

Ambient Temp er at ure-Ta (oC)

HSD879 HSMC Product Specification