HSMC HSD669A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSB649A
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 1 W
Total Power Dissipation (Tc=25°C)..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) .................................................................................................. 1.5 A
IC Collector Current (Pulse) ................................................................................................. 3 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=1mA, IE=0
BVCEO 160 - - V IC=10mA, IB=0
BVEBO 5 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=160V, IE=0
*VCE(sat) - - 1 V IC=500mA, IB=50mA
VBE(on) - - 1.5 V IC=150mA, VCE=5V
*hFE1 100 - 320 IC=150mA, VCE=5V
*hFE2 30 - - IC=500mA, VCE=5V
fT - 140 - MHz IC=150mA , VCE=5V
Cob - 14 - pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank C D
Range 100-200 180-320
HSD669A HSMC Product Specification
HI-SINCERITY
)
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 2/3
1000
100
hFE
10
1 10 100 1000 10000
Cur rent Gain & Collector Current
125oC
25oC
75oC
hFE @ VCE=5V
Collector Current- IC (mA)
Sat urati on Voltage & Col lector Current
1000
25oC
75oC
1000
Sat ura tion Voltage & C ollector C urrent
100
Saturation Voltage (mV)
10
10 100 1000 10000
1000
125oC
75oC
25oC
CE(sat)
V
Collector Current- IC (mA)
ON Voltage & Collector C urrent
25oC
75oC
@ IC=10I
B
125oC
125oC
BE(ON)
V
BE(sat)
V
Saturation Voltage (mV)
100
1 10 100 1000 10000
Collector Current- IC (mA)
Capacita nce & Reverse-Biased Voltage
100
10
Cob
Capacitance (pF)
1
0.1 1 10 100
Rev e r se-Biased Voltage ( V)
@ IC=10I
B
ON Voltage (m V)
100
1 10 100 1000 10000
Collector Current- IC (mA)
Safe Operating Area
100000
10000
1000
Collect or Cur rent (mA
100
10
1 10 100 1000
Forwar d Voltage (V)
@ VCE=5V
PT=1ms
PT=100ms
PT=1s
HSD669A HSMC Product Specification
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