HSMC HSD667A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6510-B
Issued Date : 1996.07.15
Revised Date : 2000.10.01
Page No. : 1/4
HSD667A
SILICON NPN EPITAXIAL
Description
Low Frequency Power Amplifier Complementary Pair With
HSB647A.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 120 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 120 - - V IC=10uA, IE=0
BVCEO 100 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 10 uA VCB=100V, IE=0
*VCE(sat) - - 1 V IC=500mA, IB=50mA
VBE(on) - - 1.5 V VCE=5V, IC=150mA
*hFE1 60 - 200 VCE=5V, IC=150mA
*hFE2 30 - - VCE=5V, IC=500mA
fT - 140 - MHz VCE=5V, IC=150mA
Cob - 12 - pF VCB=10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank B C
Range 60-120 100-200
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6510-B
Issued Date : 1996.07.15
Revised Date : 2000.10.01
Page No. : 2/4
1000
100
hFE
10
1 10 100 1000
Collector Curren t ( mA)
VCE=5V
On Voltage & Collector Current
10
Current Gain & Collector Current
1
BE(sat)
V
0.1
CE(sat)
Saturation Voltage (V)
0.01
0.1 1 10 100 1000
V
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Cut off Fr equen cy & Collector Current
1000
Saturation Volt age & Col lector C urren t
100
VCE=5V
1
BE(on)
V
On Voltage (mV)
0.1
0.1 1 10 100 1000
Collector Current (mA)
@ VCE=5V
Capacit an ce & R everse-Biased Voltage
100
10
Capac itance (pF)
Cob
10
Cutoff Frequency (MHz)
1
1 10 100 1000
10000
1000
(mA)
C
100
Collector Current-I
10
PT=1ms
PT=100ms
PT=1s
Collector Current (mA)
Safe Operating Ar ea
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
1
1 10 100
Forwar d Voltage- VCE (V)
HSMC Product Specification
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