HSMC HSD313 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and
switching applications.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 60 V
BVCEO Collector to Emitter Voltage.................................................................................... 60 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=1mA, IE=0
BVCEO 60 - - V IC=10mA, IB=0
BVEBO 5 - - V IE=100uA, IC=0
ICBO - - 0.1 mA VCB=20V, IE=0
ICEO - - 5 mA VCE=60V, IB=0
IEBO - - 1 mA VEB=4V, IC=0
*VCE(sat) - - 1 V IC=2A, IB=0.2A
*VBE(on) - - 1.5 V IC=1A, VCE=2V
*hFE1 40 - 320 IC=1A, VCE=2V
*hFE2 40 - - IC=0.1A, VCE=2V
ft - 8 - V VCE=5V, IC=0.5A
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank C D E F
hFE 40-80 60-120 100-200 160-320
HSD313 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 2/4
1000
Cur rent G ain & C o llector Current
125oC
25oC
75oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
1000
Sat uration Voltage & Collector Current
CE(sat)
V
Collector Current-IC (mA)
B
@ IC=10I
1000
125oC
25oC
100
hFE
hFE @ VCE=4V
10
1 10 100 1000 10000
Collector Current-IC (mA)
75oC
Sat urati on Voltage & Collector Cu rrent
10000
Cur rent Gain & Collector Current
1000
CE(sat)
V
@ IC=50I
B
100
Saturat ion Volta ge ( m V)
75oC
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
125oC
ON Voltage & Collector Current
10000
BE(ON)
V
@ VCE=2V
1000
25oC
ON Voltage ( m V)
125oC
75oC
25oC
75oC
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
125oC
Collector Current- IC (mA)
Switching Time & C ollector Current
10.00
B2
Switching Times (us)...
VCC=30V, IC=10IB1= -10I
1.00
0.10
Tstg
Ton
Tf
100
1 10 100 1000 10000
Collector Current- IC (mA)
0.01
0.1 1.0 10.0
Collector Current (A)
HSD313 HSMC Product Specification
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