HSMC HSD1616A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1616A is designed for audio frequency pow er ampli fier and
medium speed switching applications.
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 120 V
VCEO Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current *(Pulse)................................................................................................. 2 A
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 120 - - V IC=100uA
BVCEO 60 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICBO - - 100 nA VCB=60V
IEBO - - 100 nA VEB=6V
*VCE(sat) - 150 300 mV IC=1A, IB=50mA
*VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA
VBE(on) 600 - 700 mV VCE=2V, IC=50mA
*hFE1 135 - 600 VCE=2V, IC=100mA
*hFE2 81 - - VCE=2V, IC=1A
fT 100 160 - MHz VCE=2V, IC=100mA
Cob - - 19 pF IE=0, VCB=10V, f=1MHz
ton - 0.07 - uS VCE=10V, IC=100mA
ts - 0.95 - uS IB1=-IB2=10mA
tf - 0.07 - uS VBE(off)=-2~-3V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank Y G L
Range 135-270 200-400 300-600
HSD1616A HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 2/4
1000
100
hFE
10
Current Gain & Collec tor Current
125oC
25oC
1 10 100 1000 10000
75oC
hFE @ VCE=2V
Collector Current- IC (mA)
Sat ura tion Voltage & C ollector C urrent
1000
25oC
1000
100
125oC
25oC
10
Satur ation Voltage ( m V)
1
1 10 100 1000 10000
Collector Current- IC (mA)
75oC
CE(sat)
V
@ IC=20I
ON Voltage & Collector Current
1000
25oC
Sat urati on Voltage & Collector Curren t
B
75oC
125oC
Saturation Voltage (mV)
100
1 10 100 1000 10000
100
Capacitance (Pf)
Capacita nce & Rev erse-Bia sed Voltage
Collector Current- IC (mA)
Cob
BE(sat)
V
@ IC=20I
75oC
125oC
ON Voltage ( m V)
BE(ON)
V
B
100
1 10 100 1000 10000
Collector Current- IC (mA)
@ VCE=2V
Cutoff Frequency & Collector Current
1000
fT @ VCE=2V
100
Cutoff Fr equen cy ( M Hz)...
10
0.1 1 10 100
Reverse Biased Volt a ge ( V)
10
1 10 100 1000
Collector Current (mA)
HSD1616A HSMC Product Specification
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