HSMC HSD1159 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1159
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Capable of efficient drive with small internal loss due to excellent tf.
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 200 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current........................................................................................................... 4.5 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 200 - - V IC=5mA, IE=0
BVCEO 60 - - V IC=5mA, IB=0
BVEBO 6 - - V IE=5mA, IC=0
ICBO - - 0.1 mA VCB=40V, IE=0
IEBO - - 0.1 mA VEB=5V, IC=0
*VCE(sat) - 0.5 1 V IC=4A, IB=0.4A
*VBE(sat) - - 1.5 V IC=4A, IB=0.4A
*hFE1 30 - 160 IC=1A, VCE=5V
*hFE2 25 - - IC=4A, VCE=5V
ft - 10 - MHz VCE=5V, IC=1A
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 2/3
100
Current Gain & Col lector Current
hFE @ VCE=5V
hFE
10
1 10 100 1000 10000
10000
Collector Curren t ( mA)
On Vol t age & Coll ect or Cur r ent
10000
1000
BE (sat)
V
100
Saturation Voltage (mV)
CE (sat)
V
10
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Switching Time & Collector Current
10
Saturation Volt age & Col lector C ur rent
1
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE (on)
V
@ VCE=4V
Collector Curren t ( mA)
Capa citance & Rev erse-Bi ased Volt age
1000
100
Capacitance (pF)
Cob
Ton
0.1
Switchin g T imes ( us)
0.01
0.1 1.0 10.0
Collector Current (A)
Tf
Safe Operating Ar ea
100000
10000
(mA)
C
1000
PT=1 ms
100
Collector Current-I
10
PT=100 ms
PT=1 s
10
0.1 1 10 100
Reverse- Biased Voltage ( V)
1
1 10 100 1000
Forwar d Voltage- VCE (V)
HSMC Product Specification
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