HSMC HSC4242 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSC4242
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC4242 is designed for triple diffused planar type and high
speed switching applications.
Spec. No. : HE6739-C
Issued Date : 1994.05.18
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 450 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage......................................................................................... 10 V
IC Collector Current.............................................................................................................. 7 A
IB Base Current.................................................................................................................... 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 450 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=100mA, IB=0
BVEBO 10 - - V IE=1mA, IC=0
ICBO - - 100 uA VCB=450V, IE=0
IEBO - - 100 uA VEB=10V, IC=0
*VCE(sat) - - 0.8 V IC=4A, IB=0.8A
*VBE(sat) - - 1.2 V IC=4A, IB=0.8A
*hFE1 15 - 55 IC=0.8A, VCE=5V
*hFE2 10 - - IC=2A, VCE=5V
*hFE3 10 - - IC=4A, VCE=5V
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank A B1 B2 B3 B4
Range 15-28 22-35 29-42 36-49 43-55
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6739-C
Issued Date : 1994.05.18
Revised Date : 1999.08.01
Page No. : 2/3
100
hFE
10
1 10 100 1000 10000
Collector Curren t ( mA)
VCE=5V
Saturation Volt age & Col lector Current
10000
Current Gain & Collector Current
1000
100
Satu r ation Vil t age (V)
CE (sat)
V
@ IC=5I
10
1 10 100 1000 10000
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
1000
Saturation Voltage & Collector Current
B
1000
BE (sat)
V
@ IC=5I
Satu r ation Vol tage (V)
100
1 10 100 1000 10000
Collector Curren t ( mA)
Safe Operating Area
100
PT=1ms
10
(mA)
C
Collector Curren t- I
0.1
1
PT=100ms
PT=1s
100
B
Capacitance (Pf)
Cob
10
1 10 100
Reverse- Biased Vol tage (V)
0.01
10 100 1000
Forwar d Vol tage-VCE (V)
HSMC Product Specification
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