HSMC HSC3953 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High–definition CRT display video output, wide-band amplifier.
Features
High fT: 500MHz
•
High Breakdown Voltage: BVCEO=120Vmin
•
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
•
(Ta=25°C)
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage.................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage........................................................................................... 3 V
IC Collector Current....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
(Ta=25°C)
Electrical Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 120 - - V IC=100uA, IE=0
BVCEO 120 - - V IC=1mA, IB=0
BVEBO 3 - - V IE=100uA, IC=0
ICBO - - 0.1 uA VCB=120V, IE=0
IEBO - - 0.1 uA VEB=2V
*VCE(sat) - - 1 V IC=30mA, IB=3mA
*VBE(sat) - - 1 V IC=30mA, IB=3mA
*hFE1 60 - 320 IC=10mA, VCE=10V
*hFE2 40 - - IC=100mA, VCE=10V
fT - 400 - MHz IC=50mA , VCE=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank D E F
Range 60-120 100-200 160-320
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 2/3
1000
Current Gai n & Collector Current
100
hFE
10
0.1 1 10 100 1000
1000
Saturation Volt age & Coll ector Cu rren t
Collector Curren t (m A )
VCE=10 V
BE(sat)
V
@ IC=10I
B
1000
100
CE(sat)
V
10
Satu r ation Voltage (mV)
1
0.1 1 10 100 1000
Collector Curren t (m A )
@ IC=10I
B
Output Capacitance & Reverse-Biased Voltage
10
Saturation Volt age & Coll ector Cu rren t
Satu r ation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Collector Current (A)
10
1 10 100 1000
Collector Curren t (m A )
Safe Operatin g Area
PT=1ms
PT=100ms
PT=1s
Forward Voltage (V)
Capacitance (Pf)
1
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
Cob
HSMC Product Specification
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