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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6527-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/3
HSC2228Y
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2228Y is designed for high voltage amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 160 V
VCEO Collector to Emitter Voltage ................................................................................... 160 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ........................................................................................................ 50 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 160 - - V IC=100uA, IE=0
BVCEO 160 - - V IC=1mA, IB=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=160V, IE=0
IEBO - - 1 uA VEB=5V
*VCE(sat) - - 0.6 V IC=2mA, IB=20mA
*VBE(sat) - - 1 V IC=2mA, IB=20mA
*hFE 60 - 320 VCE=10V, IC=10mA
fT 50 - - MHz VCE=30V, IC=10mA
Cob - - 4 pF VCB=10V, f=1MHZ
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE
Rank D E F
Range 60-120 100-200 160-320
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6527-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
10
Current Gain & Collector Current
VCE=10V
Collector Curren t ( mA)
Capacit ance & Reverse-Biased Voltage
Cob
10000
Saturation Voltage & Collect or Current
1000
BE(sat)
V
100
Satu r ation Voltage ( m V)
CE(sat)
V
10
0.1 1 10 100 1000
1000
100
Collector Curren t ( mA)
Cutoff Frequency & Ic
VCE=30V
@ IC=10I
@ IC=10I
B
B
Capac itance (pF)
1
0.1 1 10 100 1000
10000
1000
(mA)
C
Collector Curren t- I
PT=1ms
PT=100ms
PT=1s
100
10
1
1 10 100 1000
Reverse Biased Vol tage (V)
Safe Operating Area
Forwar d Vol tage-VCE (V)
10
Cutoff Frequency (MHz)
1
1 10 100 1000
Collector Curren t ( mA)
Power Derating
1000
900
800
700
600
500
400
300
Power Dissipation-PD(mW)
200
100
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure-Ta(oC)
HSMC Product Specification