HSMC HSB857D Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature.............................................................................................. -50~+150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).....................................................................................1.5 W
Total Power Dissipation (Tc=25°C)......................................................................................10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.......................................................................................-60 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
IC Collector Current (IC Peak)........................................................................................... -4.5 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-50uA
BVCEO -50 - - V IC=-1mA
BVEBO -5 - - V IE=-50uA
ICBO - - -1 uA VCB=-50V
ICEO - - -1 uA VCE=-40V
IEBO - - -1 uA VEB=-4V
*VCE(sat) - -0.3 -1 V IC=-2A, IB=-0.2A
*VBE(sat) - - -1.5 V IC=-2A, IB=-0.2A
*hFE 170 - 400 IC=-500mA, VCE=-3V
fT - 15 - MHz VCE=-5V, IC=-500mA, f=100MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HSB857D HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 2/4
1000
125oC
25oC
100
hFE
10
1 10 100 1000 10000
Collector Current - IC (mA)
75oC
hFE @ VCE=3V
Sat urati on Voltage & Collector Current
10000
Cur ren t Ga in & C ollector Cu rrent
BE(sat)
V
@ IC=10I
B
1000
100
Satur ation Voltag e (mV)
10
Sat urati on Voltage & Col lector Current
CE(sat)
V
1 10 100 1000 10000
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
Capa citance & Rev er se- B i ased Voltage
1000
1000
Saturation Voltage (mV)
100
1 10 100 1000 10000
25oC
125oC
Collector Current-IC (mA)
75oC
Safe Operating Area
10
PT=1ms
(A)
C
1
Collect or Curre n t-I
PT=100ms
PT=1s
100
Capacitance (pF)
10
1 10 100
1.6
1.4
1.2
1
0.8
0.6
0.4
PD(W) , Power Dissipation
0.2
Rev e r se Biased Voltage ( V)
Cob
PD - Ta
0.1
1 10 100 1000
Forwar d Voltage- VCE (V)
0
0 50 100 150 200
Ambient Temperatur e - Ta (oC )
HSB857D HSMC Product Specification
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