HSMC HSB772 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C)..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC)..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
TO-126ML
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100uA
BVCEO -30 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -1 uA VCB=-30V
IEBO - - -1 uA VEB=-3V
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A
*hFE1 30 - - IC=-20mA, VCE=-2V
*hFE2 100 200 400 IC=-1A, VCE=-2V
fT - 80 - MHz IC=-0.1A, VCE=-5V
Cob - 55 - pF VCB=-10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank Q P E
Range 100-200 160-320 200-400
HSB772 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 2/4
1000
75oC125oC
25oC
100
hFE
hFE @ VCE=2V
10
1 10 100 1000 10000
Collector Current-IC (mA)
Sat urati on Voltage & C ol lector C urrent
10000
Current Gain & Collector Current
1000
100
CE(sat)
V
@ IC=10I
125oC
B
75oC
25oC
10000
1000
100
Saturation Voltage (mV)
10000
1000
100
10
Sat urati on Voltage & Col lector Current
CE(sat)
V
125oC
1
1 10 100 1000 10000
B
@ IC=5I
25oC
Collector Current - IC (mA)
75oC
Sat uration Voltage & Collect or Current
CE(sat)
V
@ IC=20I
125oC
B
75oC
25oC
Saturation Voltage (mV)
10
1
1 10 100 1000 10000
Collector Current - IC (mA)
Sat urati on Voltage & Collector Current
10000
CE(sat)
V
1000
100
Satur ation Voltag e (mV)
10
1
1 10 100 1000 10000
B
@ IC=40I
125oC
25oC
Collector Current - IC (mA)
75oC
Saturat ion Volta ge ( m V)
10
1
1 10 100 1000 10000
Collector Current - IC (mA)
Sat uration Voltage & Collect or Current
10000
BE(sat)
V
1000
Saturat ion Volta ge ( m V)
100
1 10 100 1000 10000
25oC
125oC
B
@ IC=10I
75oC
Collector Current - IC (mA)
HSB772 HSMC Product Specification
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