HSMC HSB649A Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HSB649A

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier complementary pair with HSD669A.

Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 1/3

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation ........................................................................................................ 1 W

Total Power Dissipation (Tc=25°C)..................................................................................... 20 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... -180 V

BVCEO Collector to Emitter Voltage................................................................................. -160 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current (DC).................................................................................................. -1.5 A

IC Collector Current (Pulse) ................................................................................................ -3 A

TO-126ML

Electrical Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -180 - - V IC=-1mA, IE=0
BVCEO -160 - - V IC=-10mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0

ICBO - - -10 uA VCB=-160V, IE=0

*VCE(sat) - - -1 V IC=-500mA, IB=-50mA

*VBE(on) - - -1.5 V IC=-150mA, VCE=-5V

*hFE1 60 - 200 IC=-150mA, VCE=-5V
*hFE2 30 - - IC=-500mA, VCE=-5V

fT - 140 - MHz IC=-150mA ,VCE=-5V

Cob - 27 - pF VCB=-10V, f=1MHz, IE=0

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank B C

Range 60-120 100-200

HSB649A HSMC Product Specification

HI-SINCERITY

)

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 2/3

1000

125oC

75oC

100

hFE

10

1

1 10 100 1000 10000

25oC

hFE @ VCE=5V

Collector Current-IC (mA)

ON Voltage & Collector Current

10000

BE(ON)

V

@VCE=5V

Current Gain & Collector Current

10000

CE(sat)

V

1000

100

Satur ation Volta g e ( m V)

10

1 10 100 1000 10000

B

@ IC=10I

125oC

25oC

Collector Current - IC (mA)

75oC

Capacit an ce & Rev er se- B i ased Voltage

100

Sat urati on Volta ge & C ollector Current

1000

ON Voltage ( m V)

100

1 10 100 1000 10000

25oC

125oC

Collector Current -IC (mA)

75oC

Safe Operatin g Ar ea

100000

10000

1000

100

Collect or Curr e nt ( mA

10

PT=1ms
PT=100ms
PT=1s

10

Capacitance (pF)

1

0.1 1 10 100

Reverse- Biased Vol tage (V)

Cob

1

1 10 100 1000

Forwar d Biased Vol tage (V)

HSB649A HSMC Product Specification