HSMC HSB564A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6519
Issued Date : 1993.01.15
Revised Date : 2001.10.15
Page No. : 1/3
HSB564A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB564A is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 800 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -30 V
VCEO Collector to Emitter Voltage..................................................................................... -25 V
VEBO Emitter to Base Voltage............................................................................................ -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -30 - - V IC=-100uA, IE=0
BVCEO -25 - - V IC=-10mA. IB=0
BVEBO -5 - - V IE=-100uA, IC=0
ICBO - - -100 nA VCB=-30V, IE=0
*VCE(sat) - - -0.5 V IC=-1A, IB=-100mA
*VBE(sat) - - -1.2 V IC=-1A, IB=-100mA
*hFE 70 - 400 VCE=-1V, IC=-100mA
fT - 110 - MHz VCE=-6V, IC=-10mA, f=100MHz
Cob - 18 - pF VCB=-6V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank O Y GR
Range 70-140 120-240 200-400
HSB564A HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6519
Issued Date : 1993.01.15
Revised Date : 2001.10.15
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
VCE=1V
Collecto r Cur r e nt ( mA)
Capcitance & Rev erse-Bi ased Voltage
100
10000
1000
100
Saturat ion Vol t age (m V)
10
1
Saturation Voltage & Collector Current
BE(sat)
V
CE(sat)
V
0.1 1 10 100 1000
Collect or Cur rent (mA)
@ IC=10I
@ IC=10I
B
B
Cutoff Frequency & Collector Current
1000
Cob
10
Capacitan c e (pF)
1
0.1 1 10 100
Rev ers e Biased Voltage (V)
Safe Operating Area
10000
1000
Collecto r Cur r e nt ( mA)
PT=1ms
PT=100ms
PT=1s
100
10
VCE=6V
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collecto r Cur rent (mA)
Power Derating
900
800
700
600
500
400
300
Power Dissipation-PD(mW)
200
100
1
1 10 100
Forward Voltage ( V)
0
0 50 100 150 200
Ambient T em perat ure-Ta(oC)
HSB564A HSMC Product Specification
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