HSMC HPN2369A Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 1/4
HPN2369A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPN2369A is designed for general purpose switching and amplifier
applications.
Features
• Low Collector Saturation Voltage
• High Speed Switching Transistor
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................................... 40 V
VCES Collector to Emitter Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage.................................................................................................... 15 V
VEBO Emitter to Base Voltage ......................................................................................................... 4.5 V
IC Collector Current ..................................................................................................................... 200 mA
ICM Peak Collector Current ......................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=10uA, IE=0
BVCES 40 - - V IC=10uA, VBE=0
BVEBO 4.5 - - V IE=10uA, IC=0
IEBO - - 100 nA VEB=4V, IC=0
ICBO - - 400 nA VCB=20V, IE=0
ICES - - 400 nA VCE=40V, VBE=0
*VCE(sat)1 - - 200 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 250 mV IC=30mA, IB=3mA
*VCE(sat)3 - - 300 mV IC=10mA, IB=10mA
*VCE(sat)4 - - 500 mV IC=100mA, IB=10mA
*VBE(sat) 700 - 850 mV IC=10mA, IB=1mA
*hFE1 40 - 120 IC=10mA, VCE=0.35V
*hFE2 30 - - IC=30mA, VCE=0.4V
*hFE3 20 - - IC=100mA, VCE=1V
fT 500 - - MHz IC=10mA, VCE=10V, f=100MHz
Cob - - 4 pF VCB=5V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HPN2369A HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6106
Issued Date : 1992.09.22
Revised Date : 2001.09.20
Page No. : 2/4
100
10
hFE
1
0.1 1 10 100 1000
1
Current Gain & Col l ect or Current
VCE=1V
Collector Curren t (m A)
On Voltage & Collector Current
BE(on)
V
@ VCE=1V
1
0.1
Satur ation Vol t age ( V)
0.01
Sat uration Voltage & Collector Cur rent
BE(sat)
V
CE(sat)
V
0.1 1 10 100
Collector Curren t (m A)
@ IC=10I
@ IC=10I
B
B
Capacitance & Rev erse-Biased Voltage
10
On Volt age (m V)
0.1
0.1 1 10 100
Collector Curren t (m A)
Cut off Frequency & Coll ect or Current
10000
1000
(GHz)
100
10
Cutoff Frequency
1
0.1
1 10 100
Col lect o r Current-IC (mA)
fT @ VCE=10
Capac itan c e ( p F )
1
0.1 1 10 100
Cob
Rever se- Biased Voltage (V)
Safe Oper ati ng Area
10000
1000
(mA)
C
100
Collector Curren t-I
10
1
1 10 100
Forward Volt age- VCE (V)
PT=1ms
PT=100ms
PT=1s
HPN2369A HSMC Product Specification
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