HSMC HPH2369 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HPH2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HPH2369 is designed for general purpose switching and
amplifier applicati ons.
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 1/4
Features
• Low Collector Saturation Voltage
• High speed switching Transistor
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCES Collector to Emitter Voltage ...................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 15 - - V IC=10mA, IB=0
BVCES 40 - - V IC=10uA, VBE= 0
BVEBO 4.5 - - V IE=10uA, IC=0
ICBO - - 400 nA VCB=20V, IE=0
ICES - - 300 nA VCE=25V, VBE=0
IEBO - - 100 nA VEB=2V, IC=0
*VCE(sat)1 - - 250 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 300 mV IC=10mA, IB=0.3mA
*VCE(sat)3 - - 600 mV IC=100mA, IB=10mA
*VBE(sat)1 700 - 850 mV IC=10mA, IB=1mA
*VBE(sat)2 - - 1.5 V IC=100mA, IB=1mA
*hFE1 40 80 120 IC=10mA, VCE=1V
*hFE2 20 - - IC=100mA, VCE=2V
fT 500 - - MHz IC=10mA, VCE=10V, f=100MHZ
Cob - - 4 pF VCB=5V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HPH2369 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6133
Issued Date : 1993.06.18
Revised Date : 2002.02.18
Page No. : 2/4
100
Current Gain & Collector Current
125oC
25oC
75oC
10
hFE
hFE @ VCE=1V
1
1 10 100 1000
100000
10000
Collector Current-IC (mA)
Sat urati on Voltage & Collector Curren t
100
125oC
25oC
75oC
10
hFE
hFE @ VCE=2V
1
0.1 1 10 100 1000
Collector Current- IC (mA)
Sat urati on Voltage & Coll ector Cu rrent
10000
1000
Current Gai n & Collector Cu rrent
1000
Saturat ion Volta ge ( m V)
100
10
0.1 1 10 100 1000
125oC
25oC
Collector Current-IC (mA)
75oC
CE(sat)
V
Sat urati on Voltage & Coll ector Cu rrent
10000
75oC
1000
Saturation Voltage (mV)
25oC
125oC
BE(sat)
V
@ IC=10I
@ IC=33I
75oC
100
Saturation Voltage (mV)
B
10
0.1 1 10 100 1000
1
On Voltage ( m V)
B
125oC
25oC
Collector Current-IC (mA)
CE(sat)
V
On Voltage & Collector Current
BE(on)
V
@ VCE=1V
@ IC=10I
B
100
0.1 1 10 100 1000
Collector Current-IC (mA)
0.1
0.1 1 10 100
Collector Current (mA)
HPH2369 HSMC Product Specification
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