HSMC HMPSA94 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6355
Issued Date : 1993.01.15
Revised Date : 2002.04.29
Page No. : 1/4
HMPSA94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMPSA94 is designed for application that requires high voltage.
Features
• High Breakdown Voltage: 400V(Min.) at IC=1mA
• High Current: IC=300mA at 25°C
• Complementary to HMPSA44
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................. -400 V
VCEO Collector to Emitter Voltage.............................................................................................. -400 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ................................................................................................................. -500 mA
TO-92
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-400V, IE=0
IEBO - - -100 nA VEB=-4V, IC=0
ICES - - -500 nA VCE=- 400V, VBE= 0
*VCE(sat)1 - - -350 mV IC=-1mA, IB=-0.1mA
*VCE(sat)2 - - -500 mV IC=-20mA, IB=-2mA
*VCE(sat)3 - - -750 mV IC=-50mA, IB=-5mA
*VBE(sat) - - -750 mV I C= - 10mA, IB=-1mA
*hFE1 40 - - VCE=-10V, IC=-1mA
*hFE2 50 - 300 VCE=-10V, IC=-10mA
*hFE3 45 - - VCE=-10V, IC=-50mA
*hFE4 40 - - VCE=-10V, IC=-100mA
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank NSS NS SD N
hFE@VCE=-3V, IC=-100mA
hFE2@VCE=-10V, IC=-10mA 70-200 70-300 70- 200 50-300
VCE(sat)@IC=-20mA, IB=-2mA <200mV <500mV <200mV <500mV
>50 >50
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HMPSA94 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6355
Issued Date : 1993.01.15
Revised Date : 2002.04.29
Page No. : 2/4
1000
Cur ren t Ga in & C ollector Cu rrent
125oC
100
25oC
hFE
10
hFE @ VCE=3V
1
0.1 1 10 100 1000
100000
10000
Sat urati on Voltage & C ollector Cu rrent
Collector Current I
75oC
C
(mA)
75oC
1000
Cur ren t Ga in & C ollector Cu rrent
75oC125oC
100
25oC
hFE
10
hFE @ VCE=10V
1
0.1 1 10 100 1000
10000
Sat urati on Voltage & Collector Current
Collector Current IC (mA)
1000
125oC
Saturat ion Volta ge ( m V)
100
CE(sat)
V
10
1 10 100 1000
Collector Current IC (mA)
Capacitance & Reverase-Bi ased Volt age
100
Cob
10
Capacitance (pF)
25oC
@ IC=10I
75oC
1000
Saturat ion Volta ge ( m V)
B
100
1 10 100 1000
10000
1000
(mA)
C
100
Collect or Curre nt-I
10
25oC
125oC
V
Collector Current IC (mA)
Safe Operating Area
BE(sat)
@ IC=10I
PT=1m s
PT=100ms
PT=1s
B
1
0.1 1 10 100
Reverse- Biased Vol t a ge ( V)
1
1 10 100 1000
Forwar d Biase d Vol t age-VCE (V)
HMPSA94 HSMC Product Specification
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