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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6353-B
Issued Date : 1992.11.25
Revised Date : 2000.10.01
Page No. : 1/3
HMPSA93
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HMPSA93 is designed for application as a video output to drive color
CRT, or as a dialer circuit in electronics telephone.
Features
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
For Complementary Use with NPN Type HMPSA43
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltage.................................................................................................. -200 V
VCEO Collector to Emitter Voltage ............................................................................................... -200 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
(Ta=25°C)
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -200 - - V IC=-100uA, IE=0
BVCEO -200 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-160V, IE=0
IEBO - - -100 nA VEB=-3V, IC=0
*VCE(sat) - - -350 mV IC=-20mA, IB=-2mA
*VBE(sat) - - -900 mV IC=-20mA, IB=-2mA
*hFE1 25 - - IC=-1mA, VCE=-10V
*hFE2 40 - - IC=-10mA, VCE=-10V
*hFE3 40 - - IC=-30mA, VCE=-10V
*hFE4 - 100 - IC=-80mA, VCE=-10V
fT 50 - - MHz IC=-10mA, VCE=-20V, f=100MHZ
Cob - - 8 pF VCB=-20V, f=1MHz, IE=0
Classification Of hFE2 & V
Rank hFE1 hFE2 hFE3 hFE4 VCE(sat)
NS >60 >80 >80 >80 <200mV
N >25 >40 >40 - <350mV
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
CE(sat)
HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6353-B
Issued Date : 1992.11.25
Revised Date : 2000.10.01
Page No. : 2/3
1000
Current Gai n & Collector Current
100
hFE @ VCE=10V
hFE
10
1
0.1 1 10 100 1000
Collector Curren t (m A )
Cutoff Frequency & Collector Current
1000
100000
10000
1000
BE(sat)
V
Satu r ation Voltage (mV)
100
CE(sat)
V
10
0.1 1 10 100 1000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Capa cita n ce & Reverse-Bi ased Voltage
100
Saturation Volt age & Collector Curr ent
100
VCE=20V
Cutoff Frequencey (MHz )
10
1 10 100
Collector Curren t (m A )
Safe Operating Area
10000
PT=1ms
PT=100ms
1000
(mA)
C
Collector Current -I
PT=1s
100
10
10
Capac itanc e (pF)
1
0.1 1 10 100
Cob
Reverse-Biased Voltage (V)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
1 10 100 1000
Forwar d Voltage-VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Temper atur e- Ta(oC)
HSMC Product Specification