HSMC HMPSA43 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6334-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/3
HMPSA43
NPN SILICON TRANSISTOR
Description
The HMPSA43 is high voltage transistor.
Features
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
For Complementary Use with PNP Type HMPSA93
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 200 V
VCEO Collector to Emitter Voltage ................................................................................... 200 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 200 - - V IC=100uA, IE=0
BVCEO 200 - - V IC=1mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=200V, IE=0
IEBO - - 100 nA VEB=6V, IC=0
*VCE(sat) - - 350 mV IC=20mA, IB=2mA
*VBE(sat) - - 900 mV IC=20mA, IB=2mA
*hFE1 25 - - IC=1mA, VCE=10V
*hFE2 40 - - IC=10mA, VCE=10V
*hFE3 40 - - IC=30mA, VCE=10V
fT 50 - - MHz IC=10mA, VCE=20V, f=100MHZ
Cob - - 4 pF VCB=20V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2 & V
Rank hFE1 hFE2 hFE3 VCE(sat)
NS
N
80
>
25
>
CE(sat)
>
>
120
40
>
>
120
40
200mV
<
350mV
<
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6334-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 2/3
1000
100
hFE
10
1
0.1 1 10 100 1000
VCE=10V
Collector Curren t ( mA)
Capacit ance & Reverse- Bia sed Voltage
100
Current Gain & Col lector Current
10000
Saturation Voltage & Collector Curr ent
1000
BE(sat)
V
100
Satu r ation Vol tage (m V)
10
0.1 1 10 100 1000
1000
CE(sat)
V
Collector Curren t ( mA)
Cutoff Frequency & Ic
@ IC=10I
@ IC=10I
B
B
10
Capac itance (pF)
1
0.1 1 10 100 1000
Cob
Reverse Biased vol t age ( V)
Safe Operating Area
10000
PT=1ms
PT=100ms
1000
PT=1s
(mA)
C
100
Collector Curren t- I
10
100
VCE=20V
Cutoff Frequency (MHz)
10
1 10 100
Collector Curren t ( mA)
PD-Ta
700
600
500
400
300
200
Power Dissipation-PD(mW)
100
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
0
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure- Ta(oC)
HSMC Product Specification
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