HSMC HMPS8599 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6319-B
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPS8599
PNP SILICON TRANSISTOR
Description
HMPS8599 is designed for general purpose amplifier applications.
Features
Low Collector-Emitter Saturation Voltage
•
HMPS8599 is complementary to HMPS8099
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +125 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e....................................................................................... -80 V
VCES Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current...................................................................................................... -500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO -80 - - V IC=-100uA, IE=0
BVCEO -80 - - V IC=-10mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-80V, IE=0
IEBO - - -100 nA VEB=-4V, IC=0
ICEO - - -100 nA VCE=-60V, IB=0
*hFE1 100 - 300 IC=-1mA, VCE=-5V
*hFE2 100 - - IC=-10mA, VCE=-5V
*hFE3 75 - - IC=-100mA, VCE=-5V
*VCE(sat)1 - - -0.4 V IC=-100mA, IB=-5mA
*VCE(sat)2 - - -0.3 V IC=-100mA, IB=-10mA
VBE(on) -0.6 - -0.8 V IC=-10mA, VCE= -5V
fT 150 - - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - - 8 PF VCB=-5V, IE=0, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6319-B
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 2/4
1000
Current Gain & Collector Current
VCE=5V
100
hFE
10
0.1 1 10 100 1000
100
Capa citance & Rev er se-Bia sed Vol t age
Collector Curren t ( mA)
10000
1000
BE(sat)
V
100
Satu r ation Vol tage (m V)
10
0.1 1 10 100 1000
Collector Curren t ( mA)
@ IC=10I
CE(sat)
V
B
@ IC=10I
Cut o ff Fr equency & Col lector Current
1000
Saturation Voltage & Collector Current
B
10
Cob
Capac itance (pF)
1
0.1 1 10 100
Reverse Biased Vol t age ( V)
On Volta ge C ollector Current
10
1
On Voltage (V)
BE(ON)
V
@ VCE=5V
VCE=20V
100
Cutoff Frequency (MHz)
10
1 10 100
Collector Curren t ( mA)
Safe Operating Area
10000
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Curren t- I
1000
100
10
0.1
1 10 100 1000
Collector Curren t ( mA)
1
1 10 100
Forwar d Biased Vol tage-VCE (V)
HSMC Product Specification
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