HSMC HMPS8099 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6318-A
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 1/4
HMPS8099
NPN SILICON TRANSISTOR
Description
HMPS8099 is designed for general purpose amplifier applications.
Features
Low Collector-Emitter Saturation Voltage
•
HMPS8099 is complementary to HMPS8599
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +125 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 80 V
VCES Collector to Emitter Voltage...................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 80 - - V IC=100uA, IE=0
BVCEO 80 - - V IC=10mA, IB=0
BVEBO 6 - - V IE=10uA, IC=0
ICBO - - 100 nA VCB=80V, IE=0
IEBO - - 100 nA VEB=4V, IC=0
ICEO - - 100 nA VCE=60V, IB=0
*hFE1 100 - 300 IC=1mA, VCE=5V
*hFE2 100 - - IC=10mA, VCE=5V
*hFE3 75 - - IC=100mA, VCE=5V
*VCE(sat)1 - - 0.4 V IC=100mA, IB=5mA
*VCE(sat)2 - - 0.3 V IC=100mA, IB=10mA
VBE(on) 0.6 - 0.8 V IC=10mA, VCE=5V
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6318-A
Issued Date : 1996.07.18
Revised Date : 2000.10.01
Page No. : 2/4
1000
VCE=5V
100
hFE
10
0.1 1 10 100 1000
Collector Curren t ( m A )
On Vol t age & Collect or Cur rent
10000
Current Gain & Collector Current
1000
100
Satu r ation Vol t age (mV)
10
0.1 1 10 100 1000
VCE(sat) @ IC=20IB
VCE(sat) @ IC=10IB
Collector Curren t ( m A )
Cut o ff Fr equency & Collector Current
1000
Satur ation Voltage & C ollector Current
1000
On Voltage (mV)
100
0.1 1 10 100 1000
VBE(on) @ VCE=5V
Collector Curren t ( m A )
Capa citance & Rev er se- Biased Voltage
100
10
Capac itan c e (pF)
Cob
VCE=5V
100
Cutoff Frequency (MHz)
10
1 10 100 1000
10
PT=1ms
1
(mA)
C
Collector Curren t- I
PT=100ms
PT=1s
0.1
Collector Curren t ( m A )
Safe Operating Area
1
0.1 1 10 100
Reverse Biased Vol t age ( V)
0.01
1 10 100
Forwar d Vol tage-VCE (V)
HSMC Product Specification
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