HSMC HMPS651 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HMPS651
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)............................................................................... 625 mW
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 80 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current.............................................................................................................. 2 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=10mA, IB=0
BVCEO 60 - - V IC=100uA, IE=0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 0.1 uA VCB=80V, IE=0
IEBO - - 0.1 uA VEB=4V, IC=0
*VCE(sat)1 - - 0.5 V IC=2A, IB=200mA
*VCE(sat)2 - - 0.3 V IC=1A, IB=100mA
*VBE(sat) - - 1.2 V IC=1A, IB=100mA
VBE(on) - - 1 V IC=1A, VCE=2V
*hFE1 75 - - IC=50mA, VCE=2V
*hFE2 75 - - IC=500mA, VCE=2V
*hFE3 75 - - IC=1A, VCE=2V
*hFE4 40 - - IC=2A, VCE=2V
fT 75 - - MHz IC=50mA, VCE=5V, f=100MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 2/4
1000
Current Gain & Collector Current
VCE=6V
VCE=2V
100
hFE
10
0.1 1 10 100 1000 10000
10000
Collector Curren t ( mA)
On Vol t age & Coll ect or Current
10000
1000
BE(sat)
V
100
Satu r ation Vol tage (m V)
10
0.1 1 10 100 1000 10000
Collector Curren t ( mA)
@ IC=10I
B
CE(sat)
V
@ IC=10I
Cut o ff Fr equenc y & Collector Current
1000
VCE=5V
Saturation Voltage & Collector Cu rrent
B
1000
BE(on)
V
On Voltage (mV)
100
10 100 1000 10000
@ VCE=2V
Collector Curren t ( mA)
Capa citance & Rev erse-Bi ased Voltage
100
10
Capac itance (pF)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Curren t ( mA)
Safe Operating Area
100000
10000
(mA)
C
Collector Curren t- I
1000
100
PT=1ms
PT=100ms
PT=1s
10
1
0.1 1 10 100 1000
Reverse Biased Vol tage (V)
1
1 10 100
Forwar d Vol tage- VCE ( V )
HSMC Product Specification
Loading...