HSMC HMM1225, HMX1225 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HMX1225
HMM1225

0.8A 300/380 VOLTAGE SCRS IGT<200uA

Description

The HMX1225/HMM1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.

Absolute Maximum Ratings (Ta=25°C)

Parameter Part No. Symbol Min. Max. Unit Test Conditions

Repetitive Peak Off State
Voltage

On-State Current IT(rms) 0.8 - A
Average On-State Current IT(AV) 0.5 - A
Peak Reverse Gate Voltage VGRM 8 - V IGR=10uA
Peak Gate Current IGM 1 - A 10us max
Gate Dissipation PG(AV) 0.1 - W 20ms max
Operating Temperature Tj -40 125
Storage Temperature Tstg -40 125
Soldering Temperature Tsld - 250

HMX1225

HMM1225

VDRM
VDRM

380
300

-

-

V

Tj=40°C to 125°C

V

(RGK=1K)
TC=40°C
Half Cycle=180°,TC=40°C

°C
°C

1.6mm from case 10s max

°C

Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 1/2

Classification Of IGT

Rank A C

HMX1225 10-23 uA 17-55 uA

HMM1225 10-23 uA 17-55 uA

Electrical Characteristics (Ta=25°C)

Parameter Symbol Min Max Unit Test Conditions
Off-State Leakage Current IDRM - 0.1 mA
Off-State Leakage Current IDRM - 5 uA

On-State Voltage VT
On-St ate Threshold Voltage VT(TO) - 0.95 V

On-State Slops Resistance rT - 600 Ohm
Gate Trigger Current IGT - 200 uA VD=7V
Gate Trigger Voltage VGT - 0.8 V VD=7V
Holding Current IH - 5 mA RGK=1K(ohm)
Latching Current IL - 6 mA RGK=1K(ohm)
Critical Rate of Voltage Rise dv/dt 25 - V/us
Crtical Rate of Current Rise di/dt 30 - A/us
Gate Controlled Delay Time tgd - 500 ns IG=10mA,diG/dt=0.1A/us

Commutated Turn-of f Time tg - 200 us
Thermal Resistance junc.to case

Thermal Resistance junc. to amb

HMX1225 & HMM1225 HSMC Product Specification

Rθjc
Rθja

-1.4V

-2.2V

100 - K/W
200 - K/W

@VDRM (RGK=1K), Tj=125°C
@VDRM (RGK=1K), Tj=25°C
at IT=0.4A, Tj=25°C
at IT=0.8A, Tj=25°C
Tj=125°C
Tj=125°C

VD=0.67*VDRM(RGK=1K), Tj=125°C
IG=10mA,diG/dt=0.1A/us, Tj=125°C

Tc=85°C,VD=0.67*VDRM
VR=35V,IT=IT(AV)

HI-SINCERITY

MICROELECTRONICS CORP.

SOT-89 Dimension

C

Spec. No. : Preliminary Data
Issued Date : 2000.07.01
Revised Date : 2001.09.06
Page No. : 2/2

HMX1225 Marking:

H

Date Code

B

D

Laser Marking

H1MX

225

321

HMM1225 Marking:

E

F

G

A

3-Lead SOT-89 Pla stic Su rface Mounted Package

DIM

A 0.1732 0.1811 4.40 4.60 F 0.0583 0.0598 1.48 1.52
B 0.1594 0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591 0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945 0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.0141 0.0201 0.36 0.51

Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.

2.Controlling dimension: millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.

Material:

• Lead: 42 Alloy ; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

I

Style: Pin 1.Gate 2.Anode 3.Cathode

HSMC Package Code: M

DIM

Min. Max. Min. Max.

Date Code

Laser Marking

H1MM

225

*: Typical

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: [phone] Fax: [phone]

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: [phone]~5 Fax: [phone]

HMX1225 & HMM1225 HSMC Product Specification