HSMC HMJE3055T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE3055T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE3055T is designed for general purpose of amplifier and
switching applications.
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperature
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C).................................................................................... 75 W
Total Power Dissipation (Ta=25°C)................................................................................... 0.6 W
Maximum Voltages and Currents (Ta=25°C)
•
BVCBO Collector to Base Voltage...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 5 V
IC Collector Current ........................................................................................................... 10 A
IB Base Current.................................................................................................................... 6 A
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCEO 60 - - V IC=200mA, IB=0
BVCBO 70 - - V IC=10mA, IE=0
BVEBO 5 - - V IE=10mA, IC=0
ICBO - - 1. mA VCB=70V, IE=0
ICEX - - 1. mA VCE=70V, VEB(off)=1.5V
ICEO - - 700 uA VCE=30V, IB=0
IEBO - - 5 mA VEB=5V, IC=0
*VCE(sat)1 - - 1.1 V IC=4A, IB=400mA
*VCE(sat)2 - - 8.0 V IC=10A, IB=3.3A
*VBE(on) - - 1.8 V IC=4A, VCE=4V
*hFE1 20 - 100 IC=4A, VCE=4V
*hFE2 5 - - IC=10A, VCE=4V
fT 2 - - MHz VCE=10V, IC=500mA, f=0.5MHz
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 2/3
100
Current Gain & Collector Current
hFE @ VCE=4V
hFE
10
1 10 100 1000 10000
Collector Current (mA)
On Voltage & Collector Current
10000
10000
1000
100
Saturation Voltage (mV)
10
10
1
Satur ation Vol tage & Collect or Current
BE (sat)
V
CE (sat)
V
1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Switching Time & Collector Current
Tstg
1000
On Voltage (mV)
100
1 10 100 1000 10000
1000
100
Capac itan c e (pF)
Capacitance & Reverse- Bia sed Vol tage
BE (on)
V
@ VCE=4V
Collector Current (mA)
Cob
Ton
0.1
Switchin g T imes ( us)
0.01
0.1 1.0 10.0
100000
10000
(mA)
C
1000
100
Collector Current-I
10
Collector Current (A)
Sa fe Oper ating Area
Tf
PT=1 ms
PT=100 ms
PT=1 s
10
0.1 1 10 100
Reverse- Biased Vol t ag e ( V)
1
1 10 100 1000
Forwar d Voltage- VCE (V)
HSMC Product Specification
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