HSMC HMJE2955T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE2955T
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE2955T is designed for general purpose of amplifier and
switching applications.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002.04.03
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 75 W
Total Power Dissipation (Ta=25°C).................................................................................... 0.6 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -60 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current.................................................................................................................... -6 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10mA, IE=0
BVCEO -60 - - V IC=-200mA, IB=0
BVEBO -5 - - V IE=-1mA, IC=0
ICBO - - -1 mA VCB=-70V, IE=0
ICEX - - -1 mA VCE=-70V , VEB( o ff)=-1.5V
ICEO - - -700 uA VCE=-30V, IB=0
IEBO - - -5 mA VEB=-5V, IC=0
*VCE(sat)1 - - -1.1 V IC=-4A, IB=-400mA
*VCE(sat)2 - - -8 V IC=-10A, IB=-3.3A
*VBE(on) - - -1.8 V IC=-4A, VCE=-4V
*hFE1 20 - 100 IC=-4A, VCE=-4V
*hFE2 5 - - IC=-10A, VCE=-4V
fT 2 - - MHz VCE=-10V, IC=-500mA, f=0.5MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMJE2955T HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002.04.03
Page No. : 2/4
1000
Current Gain & Collector Current
hFE @ VCE=4V
125oC
100
hFE
10
10 100 1000 10000
10000
1000
Sat urati on Voltage & Col lector Current
CE(sat)
V
25oC
75oC
Collector Current - IC (mA)
B
@ IC=3I
75oC
10000
CE(sat)
V
1000
100
Satur ation Voltag e (mV)
10
10 100 1000 10000
B
@ IC=10I
125oC
Collector Current - IC (mA)
75oC
25oC
ON Voltage & Collector Current
10000
BE(ON)
V
@ VCE=4V
Sat urati on Voltage & C ol lector C urrent
1000
25oC
75oC
100
Saturat ion Volta ge ( m V)
125oC
10
10 100 1000 10000
Collector Current-IC (mA)
25oC
Capacit ance & Reverse-Biased Volt age
1000
100
Capacitance (pF)
10
0.1 1 10 100
Cob
Rev e r se Biased Voltage ( V)
ON Voltage ( m V)
100
10 100 1000 10000
Collector Current - IC (mA)
125oC
Switching Time & Collector Current
10.00
VCC=30V, IC=10IB1= -10I
1.00
0.10
Switching Times (us)...
0.01
0.1 1.0 10.0
B2
Tstg
Ton
Tf
Collector Current (A)
HMJE2955T HSMC Product Specification
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