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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200207
Issued Date : 1993.04.12
Revised Date : 2002.08.14
Page No. : 1/4
HMJE13007
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• High Voltage, High Sp eed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
TO-220
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 80 W
• Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 9 V
IC Collector Current ........................................................................................... Continuous 8 A
IB Base Current.................................................................................................. Continuous 4 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEX 700 - - V IC=1mA, VBE(off)= 1. 5V
BVCEO 400 - - V IC=10mA
IEBO - - 100 uA VEB=9V
ICEX - - 100 uA VCE=700V, VBE(off)=1.5V
*VCE(sat)1 - - 1 V IC=2A, IB=0.4A
*VCE(sat)2 - - 2 V IC=5A, IB=1A
*VCE(sat)3 - - 3 V IC=8A, IB=2A
*VBE(sat) - - 1.2 V IC=2A, IB=0.4A
*VBE(sat) - - 1.6 V IC=5A, IB=1A
*hFE1 10 - - IC=2A, VCE=5V
*hFE2 6 - - IC=5A, VCE=5V
*hFE3 10 - 30 IC=0.5A, VCE=5V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13007 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE200207
Issued Date : 1993.04.12
Revised Date : 2002.08.14
Page No. : 2/4
100
Current Gain & Collector Current
125oC
10
hFE
1
1 10 100 1000 10000
10000
1000
100
Saturat ion Voltag e ( m V)
25oC
Collector Current-IC (mA)
Sat uration Voltage & Collector Current
CE(sat)
V
@ IC=4I
B
75oC
hFE @ VCE=5V
125oC
75oC
25oC
10000
CE(sat)
V
1000
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
B
@ IB=5I
Collector Current- IC (mA)
75oC
125oC
Sat urati on Voltage & Col lector Current
10000
Sat urati on Voltage & Collector Curren t
Saturation Voltage (mV)
1000
BE(sat)
V
@ IC=5I
25oC
125oC
B
75oC
25oC
10
1 10 100 1000 10000
Collector Current- IC (mA)
Switchange Tim e & C ollector C urrent
10
VCC=125V, IC=5IB1, IC=2I
1
Switching Time (uS)...
0.1
0.1 1 10
B2
Tstg
Ton
Tf
Collector Current-IC (A)
100
1 10 100 1000 10000
Collector Current- IC (mA)
Collector Output Capacitance
1000
100
Cob
10
Capacitance (pF)
1
0.1 1 10 100
Collector Base Voltage (V)
HMJE13007 HSMC Product Specification