HSMC HMJE13003T Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is desi g ne d for high voltage. High speed swi tchi ng
inductive circuits and amplifier applications.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C)..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 600 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=10mA, IB=0
BVEBO 8 - - V IE=1mA, IC=0
ICBO - - 10 uA VCB=600V, IE=0
IEBO - - 10 uA VBE=9V, IC=0
*VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA
*VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA
*VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA
*VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA
*hFE1 10 - 50 IC=0.3A, VCE=5V
*hFE2 10 - - IC=0.5A, VCE=5V
*hFE3 6 - - IC=1A, VCE=5V
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13003T HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 2/3
100
Cur rent Gain & Collector Current
75oC125oC
25oC
10
hFE
hFE @ VCE=2V
1
0.1 1 10 100 1000 10000
10000
1000
Collector Current-IC (mA)
Sat urati on Volt age & Coll ector Cu rrent
CE(sat)
V
@ IC=4I
B
1000
CE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000 10000
B
@ IC=3I
125oC
25oC
Collector Current- IC (mA)
Sat uration Voltage & Collector C urr ent
10000
Sat urati on Volt age & Coll ector Current
1000
CE(sat)
V
@ IC=5I
B
75oC
75oC
100
125oC
Saturat ion Volta ge ( m V)
10
1 10 100 1000 10000
Collector Current- IC (mA)
25oC
Sat uration Voltage & Collector Current
10000
Saturation Voltage (mV)
1000
BE(sat)
V
@ IC=4I
25oC
125oC
B
75oC
75oC
125oC
100
Saturation Vpltage (mV)
10
1 10 100 1000 10000
Collector Current-IC (mA)
25oC
Sat uration Voltage & Collector Current
10000
Satur ation Voltage ( m V)
1000
BE(sat)
V
@ IC=5I
25oC
125oC
B
75oC
100
1 10 100 1000 10000
Collector Current-IC (mA)
100
1 10 100 1000 10000
Collector Current- IC (mA)
HMJE13003T HSMC Product Specification
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