HSMC HMBTA94 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200209
Issued Date : 2000.11.01
Revised Date : 2002.10.25
Page No. : 1/3
HMBTA94
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBTA94 is designed for application that requires high voltage.
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
• Complementary to HMBTA44
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
SOT-23
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................... -400 V
VCEO Collector to Emitter Voltage................................................................................... -400 V
VEBO Emitter to Base Voltage............................................................................................. -6 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=-10uA, IC=0
ICBO - - -100 nA VCB=-400V, IE=0
IEBO - - -100 nA VEB=-6V, IC=0
ICES - - -500 nA VCE=-400V, VBE=0
*VCE(sat)1 - - -200 mV IC=-1mA, IB=-0.1mA
*VCE(sat)2 - - -300 mV IC=-10mA, IB=-1mA
*VCE(sat)3 - - -600 mV IC=-50mA, IB=-5mA
*VBE(sat) - - -900 mV IC=-10mA, IB=-1mA
*hFE1 50 - - VCE=-10V, IC=-1mA
*hFE2 75 - 200 VCE=-10V, IC=-10mA
*hFE3 60 - - VCE=-10V, IC=-50mA
*hFE4 40 - - VCE=-10V, IC=-100mA
Cob - 4 6 pF VCE=-10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA94 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HN200209
Issued Date : 2000.11.01
Revised Date : 2002.10.25
Page No. : 2/3
1000
125oC
100
hFE
10
25oC
hFE @ VCE=3V
1
1 10 100 1000
75oC
Collector Current-IC (mA)
Sat urati on Volt age & Collector Current
1000
Current Gain & Collector Current
100
CE(sat)
V
@ IC=10I
25oC
B
75oC
125oC
1000
Current Gain & Collector Current
hFE @ VCE=10V
75oC
125oC
100
hFE
10
1 10 100 1000
1000
Saturation Vol tage & C ollector Cur rent
25oC
Collector Current-IC (mA)
25oC
125oC
75oC
BE(sat)
V
@ IC=10I
B
Saturat ion Volta ge ( m V)
10
1 10 100 1000
Collector Current-I
C
(mA)
Capacitance & R everse-Biased Vol tage
100
10
Capacitance (pF)
1
0.1 1 10 100
Cob
Reverse-Biase d Vol tage (V)
Saturat ion Volta ge ( m V)
100
1 10 100 1000
Collector Current-IC (mA)
HMBTA94 HSMC Product Specification
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