HSMC HMBTA13 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA13
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Amplifier Transistor
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Thermal Resistance
Junction To Ambient Rθja............................................................................................ 556
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current........................................................................................................ 300 mA
SOT-23
o
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 30 - - V IC=100uA
BVCES 30 - - V IC=100uA
BVEBO 10 - - V IE=10uA
ICBO - - 100 nA VCB=30V
IEBO - - 100 nA VEB=10V
*VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA
VBE(on) - - 2.0 V VCE=5V, IC=100mA
*hFE1 5K - - VCE=5V, IC=10mA
*hFE2 10K - - VCE=5V, IC=100mA
fT 125 - - MHz VCE=5V, IC=10mA, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
C/W
HMBTA13 HSMC Product Specification
HI-SINCERITY
V
V
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 2/4
1000k
hFE @ VCE=5
100k
hFE
10k
0.1 1 10 100 1000
Collector Current (mA)
On Voltage & Collect or Cu rren t
10000
Curren t Gain & Collector C urrent
10000
Sat uration Voltage & Collector Current
1000
Saturation Voltage (mV)
100
1 10 100 1000
10
BE(sat)
V
@ IC=1000I
Collector Current (mA)
CE(sat)
V
B
@ IC=1000I
Capacitance & Rev erse-Biased Voltage
B
1000
On Voltage (m V)
100
0.1 1 10 100 1000
1000
100
Cutoff Frequence (MHz)
Cutoff Frequency & Col lector Current
BE(on)
V
@ VCE=5
Collector Current (mA)
VCE=5
Capacitan ce (pF)
1
1 10 100
Reverse-Biase d Vol tage (V)
Cob
Safe Operating Area
10000
PT=1ms
1000
PT=100ms
100
PT=1s
Collector Current (mA)
10
10
1 10 100 1000
Collector Current (mA)
1
1 10 100
Forwar d Voltage ( V)
HMBTA13 HSMC Product Specification
Loading...