HSMC HMBT8599 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8599
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier T ransist or
Spec. No. : HE6811
Issued Date : 1997.12.31
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -80 V
VCEO Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -80 - - V IC=-100uA
BVCEO -80 - - V IC=-10mA
BVEBO 5 - - V IE=-10uA
ICBO - - -100 nA VCB=-80V
ICEO - - -100 nA VCE=-60V
IEBO - - -100 nA VEB=-4V
*VCE(sat)1 - - -400 mV IC=-100mA, IB=-5mA
*VCE(sat)2 - - -300 mV IC=-100mA, IB=-10mA
VBE(on) -600 - -800 mV VCE=-5V, IC=-10mA
*hFE1 100 - 300 VCE=-5V, IC=-1mA
*hFE2 100 - - VCE=-5V, IC=-10mA
*hFE3 75 - - VCE=-5V, IC=-100mA
fT 150 - - MHz VCE=-5V, IC=-10mA
Cob - - 4.5 pF VCB=-10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT8599 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6811
Issued Date : 1997.12.31
Revised Date : 2002.10.25
Page No. : 2/3
1000
Cur rent Gain & Collect or Curr ent
100
hFE
10
0.1 1 10 100 1000
100
Capacitance & Reverse-Bia sed Voltage
VCE=10V
Collector Current (mA)
10000
1000
BE(sat)
V
100
Saturation Voltage (mV)
10
0.1 1 10 100 1000
Collector Curren t (mA)
@ IC=10I
B
CE(sat)
V
@ IC=10I
Cutoff Frequen cy & Collector C urrent
1000
Sat uration Vol tage & C ol lector C urrent
B
10
Capacitan ce (pF)
1
0.1 1 10 100
Cob
Reverse Biased Vol t ag e ( V)
On Voltage Collect or Cu rrent
10
1
BE(on)
V
On Voltage ( V)
@ VCE=5V
VCE=20V
100
Cutoff Frequency (MHz)
10
1 10 100
Collector Curren t (mA)
Safe Operati ng Area
10000
PT=1ms
PT=100ms
1000
(mA)
C
Collector Curren t- I
PT=1s
100
10
0.1
1 10 100 1000
Collector Current (mA)
1
1 10 100
Forwar d Biased Vol tage-VCE (V)
HMBT8599 HSMC Product Specification
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