HSMC HMBT8050 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The HMBT8050 is designed for general purpose amplifier
applications.
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Features
• High DC Current hFE=150-400 at IC=150mA
• Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 25 - - V IC= 10uA, IE= 0
BVCEO 20 - - V IC= 1mA, IB= 0
BVEBO 5 - - V IE=10uA, IC=0
ICBO - - 1 uA VCB=20V. IE=0
*VCE(sat) - - 500 mV IC=500mA, IB=50mA
VBE(on) - - 1 V VCE=1V, IC=150mA
*hFE 150 - 500 VCE=1V, IC=150mA
fT 150 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 10 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank D9D D9E
Range 150-300 250-500
HMBT8050 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6812
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000 10000
10000
Current Gain & Collector Current
VCE=1V
Collector Current (mA)
On Vol ta ge & C ollector Cu rrent
10000
1000
100
Sat uratio n Volta g e (mV)
Sat ur ation Voltage & Coll ector Current
BE(sat)
V
CE(sat)
V
CE(sat)
V
10
0.1 1 10 100 1000 10000
B
@ IC=10I
@ IC=100I
@ IC=10I
B
B
Collector Curren t ( mA)
Cutoff Frequency & Collector Current
1000
VCE=10V
1000
BE(on)
V
On Voltage ( m V)
100
10 100 1000 10000
@ VCE=1V
Collector Curren t ( mA)
Capa citance & Rev er se-Bia sed Vol t age
100
10
Capacitan ce ( p F)
Cob
100
Cutoff Frequency (MHz)
10
1 10 100 1000
Collector Current (mA)
Safe Operat ing Area
10000
1000
100
Collector Curren t ( mA)
PT=1ms
PT=100ms
PT=1s
10
1
0.1 1 10 100 1000
Rev e r se- Biased Voltage ( V)
1
1 10 100
Forwar d Voltage ( V)
HMBT8050 HSMC Product Specification
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