HSMC HMBT6517 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high
breakdown voltages.
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 1/3
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The HMBT6517 is complementary to HMBT6520
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temp e rature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage................................................................................................... 350 V
VCEO Collector to Emitter Voltage................................................................................................ 350 V
VEBO Emitter to Base Voltage......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 500 mA
IB Base Current ......................................................................................................................... 250 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 350 - - V IC=100uA
BVCEO 350 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 50 nA VCB=250V
IEBO - - 50 nA VEB=5V
*VCE(sat)1 - - 300 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 350 mV IC=20mA, IB=2mA
*VCE(sat)3 - - 500 mV IC=30mA, IB=3mA
*VCE(sat)4 - - 1 V IC=50mA, IB=5 mA
VBE(on) - - 2 V VCE=10V , IC=100mA
*VBE(sat)1 - - 750 mV IB=1mA, IC=10mA
*VBE(sat)2 - - 850 mV IB=2mA, IC=20mA
*VBE(sat)3 - - 900 mV IB=3mA, IC=30mA
*hFE1 20 - - VCE=10V, IC=1mA
*hFE2 30 - - VCE=10V, IC=10mA
*hFE3 30 - 200 VCE=10V, IC=30mA
*hFE4 20 - 200 VCE=10V, IC=50mA
*hFE5 15 - - VCE=10V, IC=100mA
fT 40 - 200 MHz IC=10mA, VCE=20V, f=20MHz
Cob - - 6 pF VCB=20V , f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6517 HSMC Product Specification
HI-SINCERITY
V
V
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6836
Issued Date : 1994.07.20
Revised Date : 2002.10.25
Page No. : 2/3
1000
Current Gain & Collector Current
100
hFE
10
1
0.1 1 10 100 1000
10000
hFE @ VCE=10
Collector Current (mA)
On Voltage & Collector Current
100000
10000
1000
BE(sat)
V
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
B
@ IC=10I
CE(sat)
V
Collector Current (mA)
Capacitan ce & R everse-Bia sed Voltage
10
Sat urati on Voltage & C ol lector Current
@ IC=10I
B
1000
On Vo ltage ( m V)
100
1 10 100 1000
BE(on)
V
@ VCE=10
Collector Current (mA)
Cutoff Frequency & Collector Cu rrent
100
VCE=20
Cutoff Frequency (MHz)
Capacitan ce ( p F)
1
0.1 1 10 100
Reverse- Biased Vol t a ge ( V)
Cob
Safe Operati ng Area
10000
PT=100ms
PT=1s
1000
(mA)
C
100
Collector Current -I
10
PT=1ms
10
1 10 100
Collector Current (mA)
1
1 10 100 1000
Forwar d Voltage- V
CE
(V)
HMBT6517 HSMC Product Specification
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