HSMC HMBT6429 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6429
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier T ransist or
Spec. No. : HE6810
Issued Date : 1998.07.01
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 55 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 55 - - V IC=100uA
BVCEO 45 - - V IC=1mA
ICBO - - 10 nA VCB=30V
ICEO - - 100 nA VCE=30V
IEBO - - 10 nA VEB=5V
*VCE(sat)1 - - 200 mV IC=10mA, IB=0.5mA
*VCE(sat)2 - - 600 mV IC=100mA, IB=5mA
VBE(on) 560 - 660 mV VCE=5V, IC=1mA
*hFE1 500 - - VCE=5V, IC=0.01mA
*hFE2 500 - 1250 VCE=5V, IC=0.1mA
*hFE3 500 - - VCE=5V, IC=1mA
*hFE4 500 - - VCE=5V, IC=10mA
fT 100 - 700 MHz VCE=5V, IC=1mA, f=100MHz
Cob - - 3.0 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6429 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6810
Issued Date : 1998.07.01
Revised Date : 2002.10.25
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
hFE @ VCE=5V
Collector Current ( m A )
Cut off Frequ ency & Coll ect or Current
1000
10000
1000
100
CE(sat)
V
@ IC=20I
Satu r ation Volt ag e ( mV)
10
1
0.1 1 10 100 1000
Collect o r Current (mA)
On Voltage & C ollector Current
10000
Sat urati on Voltage & Collector Curr ent
B
fT
100
Cutoff Frequency (MHz)
10
1 10 100
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
10
Capacitance (PF)
Cob
1000
On Voltage (m V)
100
0.1 1 10 100 1000
BE(on)
V
@ VCE=5V
Collector Current ( mA)
Safe Operating Area
10000
PT=1ms
1000
PT=100ms
PT=1s
100
Collector Current ( m A )
10
1
0.1 1 10 100
Reverse Biased Volt ag e ( V)
1
1 10 100
Forwar d Voltage (V)
HMBT6429 HSMC Product Specification
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