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HI-SINCERITY
MICROELECTRONICS CORP.
HMBT6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Spec. No. : HE6846
Issued Date : 1995.07.21
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current ....................................................................................................... 500 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA
BVCEO 40 - - V IC=10mA
BVEBO 12 - - V IE=10uA
ICBO - - 50 nA VCB=30V
ICEO - - 1 uA VCB=25V
IEBO - - 50 nA VEB=10V
*VCE(sat)1 - - 1.2 V IC=50mA, IB=0.5mA
*VCE(sat)2 - - 1.5 V IC=500mA, IB=0.5mA
*VBE(sat) - - 2 V IC=500mA, IB=0.5mA
VBE(on) - - 1.75 V VCE=5V, IC=50mA
*hFE1 10 - 100 K VCE=5V, IC=10mA
*hFE2 20 - 200 K VCE=5V, IC=100mA
*hFE3 14 - 140 K VCE=5V, IC=500mA
Cob - - 7 pF VCB=10V, f=1M H z
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT6427 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6846
Issued Date : 1995.07.21
Revised Date : 2002.10.25
Page No. : 2/3
100000
Current Gain & Collector Current
VCE=5V
hFE
10000
0.1 1 10 100 1000
Collector Current (mA)
On Volta ge & Collect or Current
10
10
Sat uration Volta ge & C o llector Current
BE(sat)
V
@ IC=1000I
1
CE(sat)
Satu r ation Vol tage (V)
0.1
10
V
0.1 1 10 100 1000
Capacitan ce & Reverse-Bia s ed Voltage
CE(sat)
V
@ IC=1000I
@ IC=100I
B
Collector Current (mA)
B
B
1
On Voltage ( V)
0.1
0.01 0.1 1 10 100 1000
BE(ON)
V
@ VCE=5V
Collector Current (mA)
Safe Operating Area
10000
PT=1ms
1000
PT=100ms
PT=1s
100
Collector Current (mA)
10
1
Cob
Capacitan ce (pF)
0.1
0.1 1 10 100
Reverese-Biased Voltage (V)
1
1 10 100
Forwar d Vol t a ge ( V)
HMBT6427 HSMC Product Specification