HSMC HMBT5551 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5551 is designed for general purpose applications
requiring high Breakdown Voltages.
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e............................................................................................. -55 + 150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 180 - - V IC=100uA
BVCEO 160 - - V IC=1.0mA
BVEBO 6 - - V IE=10uA
ICBO - - 50 nA VCB=120V
IEBO - - 50 nA VEB=4V
*VCE(sat)1 - - 0.15 V IC=10mA, IB=1.0mA
*VCE(sat)2 - - 0.2 V IC=50mA, IB=5mA
*VBE(sat)1 - - 1 V IC=10mA, IB=1mA
*VBE(sat)2 - - 1 V IC=50mA, IB=5mA
*hFE1 80 - - VCE=5V, IC=1mA
*hFE2 80 - 250 VCE=5V, IC=10mA
*hFE3 30 - - VCE=5V, IC=50mA
fT 100 - 300 MHz IC=10mA, VCE=10V, f=100MHz
Cob - - 6 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT5551 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6838
Issued Date : 1994.07.29
Revised Date : 2002.10.25
Page No. : 2/3
1000
125oC
100
hFE
10
1
25oC
75oC
hFE @ VCE=5V
1 10 100 1000
Collector Current-IC (mA)
Sat urati on Voltage & Collector Current
1000
25oC
Cur rent Ga in & C o llector Current
100000
Sat uration Volta ge & Collect or Cu rrent
CE(sat)
V
10000
1000
Saturation Voltage (mV)
100
10
0.1 1 10 100 1000
100
Capacitan ce & Reverse- B iased Vol tage
B
@ IC=10I
125oC
Collector Current-IC (mA)
75oC
25oC
75oC
125oC
Saturation Voltage (mV)
100
0.1 1 10 100 1000
Collector Current-IC (mA)
BE(sat)
V
@ IC=10I
Cut off Fr equency & Collector Current
1000
100
Cutoff Fr equen cy ( M Hz)...
VCE=10V
10
Capacitance (pF)
B
1
0.1 1 10 100 1000
10000
(mA)
C
Colleco tr Cu r rent-I
1000
100
PT=1s
10
Cob
Reverse Biased Vol t age (V)
Safe Operati ng Area
PT=1ms
PT=100ms
10
1 10 100
Collector Curren t ( m A )
1
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
HMBT5551 HSMC Product Specification
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