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HI-SINCERITY
MICROELECTRONICS CORP.
HMBT4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4401 is designed for general purpose switching and
amplifier applicati ons.
Spec. No. : HE6815
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
SOT-23
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO 60 - - V IC=100uA
BVCEO 40 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICEX - - 100 nA VCE=35V, VBE=-0.4V
*VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA
*VCE(sat)2 - - 750 mV IC=500mA, IB=50mA
*VBE(sat)1 - - 950 mV IC=150mA, IB=15mA
*VBE(sat)2 - - 1.2 V IC=500mA, IB=50mA
*hFE1 20 - - VCE=1V, IC=0.1mA
*hFE2 40 - - VCE=1V, IC=1mA
*hFE3 80 - - VCE=1V, IC=10mA
*hFE4 100 - 300 VCE=1V, IC=150mA
*hFE5 40 - - VCE=2V, IC=500mA
fT 250 - - MHz VCE=10V, IC=20mA, f=100MHz
Cob - - 6.5 PF VCB=5V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HMBT4401 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6815
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 2/4
1000
Current Gain & Collector Current
125oC
100
hFE
1000
10
25oC
75oC
hFE @ VCE=1V
1 10 100 1000
Collector Current-IC (mA)
Sat urati on Voltage & C ol lector Current
@ IC=10I
B
CE(sat)
V
1000
hFE @ VCE=2V
125oC
100
hFE
10
1 10 100 1000
25oC
75oC
Collector Current-IC (mA)
Sat uration Voltage & Collect or Current
1000
25oC
75oC
Cur rent Ga in & C o llector Current
100
Saturat ion Volta ge ( m V)
10
0.1 1 10 100 1000
125oC
Collector Current-IC (mA)
75oC
25oC
Capacitance & Reverse- Biased Vol tage
100
10
Capacitance (pF)
Cob
125oC
BE(sat)
V
Saturation Voltage (mV)
100
0.1 1 10 100 1000
1000
100
Cutoff Fr equen cy ( M Hz)...
Cut off Fr equency & Collector Current
Collector Current-IC (mA)
VCE=10V
@ IC=10I
B
1
0.1 1 10 100
Reverse Biased Vol t ag e ( V)
10
1 10 100 1000
Collector Curren t (mA)
HMBT4401 HSMC Product Specification