HSMC HMBT2369 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT2369 is designed for general purpose switching and
amplifier applicati ons.
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 1/3
Features
• Low Collector Saturation Voltage
• High speed switching Transistor
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 15 - - V IC=10mA, IB=0
BVEBO 4.5 - - V IE=10uA, IC=0
ICBO - - 400 nA VCB=20V, IE=0
IEBO - - 100 nA VEB=2V, IC=0
*VCE(sat)1 - - 250 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 300 mV IC=10mA, IB=0.3mA
*VCE(sat)3 - - 600 mV IC=100mA, IB=10mA
*VBE(sat)1 700 - 850 mV IC=10mA, IB=1mA
*VBE(sat)2 - - 1.5 V IC=100mA, IB=1mA
*hFE1 40 - 120 IC=10mA, VCE=1V
*hFE2 20 - - IC=100mA, VCE=2V
fT 500 900 - MHz IC=10mA, VCE=10V, f=100MHZ
Cob - - 4 pF VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBT2369 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 2/3
1000
100
VCE=1V
hFE
10
1
0.1 1 10 100 1000
Collector Current-IC (mA)
VCE=2V
Saturat ion Voltage & Collector Current
10000
Current Gain & Collector Current
1000
BE(sat)
V
@ IC=10I
B
100000
10000
1000
CE(sat)
V
@ IC=33.3I
100
Satur ation Voltag e ( mV)
10
1
1 10 100 1000
Collector Current-IC (mA)
B
CE(sat)
V
@ IC=10I
Cut off Frequ ency & Col l ect or Current
1000
FT @ VCE=10V
(MHz)
Sat uration Volta ge & Collect or Cu rrent
B
BE(sat)
V
@ IC=100I
Saturat ion Voltag e ( m V)
100
1 10 100 1000
Collector Current-IC (mA)
B
Capacit an ce & Reverse-Bia sed Voltage
10
Cob
Capaaitance (pF)
1
0.1 1 10 100
Reverse Biased Vol t a ge( V)
Cutoff Fr eque ncy
100
1 10 100
Collector Current-IC (mA)
Safe Operating Area
10
(A)
1
C
PT=1m
PT=100m
0
Collector Current-I
PT=1s
0
1 10 100
Forward Voltage-V
CE
(V)
HMBT2369 HSMC Product Specification
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