HSMC HMBT1815 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1815 is designe d for use in driver stage of AF amplifier a nd
general purpose amplification.
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 150 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCEO 50 - - V IC=1mA
BVEBO 5 - - V IE=10uA
ICBO - - 100 nA VCB=60V
IEBO - - 100 nA VEB=5V
*VCE(sat) - - 250 mV IC=100mA, IB=10mA
*VBE(sat) - - 1 V IC=100mA, IB=10mA
*hFE1 120 - 700 VCE=6V, IC=2mA
*hFE2 25 - - VCE=6V, IC=150mA
fT 80 - - MHz VCE=10V, IC=1mA, f=100MH z
Cob - - 3.5 pF VCB=10V, f=1MHz
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE1
Rank C4Y C4G C4B
Range 120-240 200-400 350-700
HMBT1815 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
10000
Current Gain & Collector Current
1000
hFE
100
hFE @ VCE=6V
10
0.1 1 10 10 0 1000
10000
Sat urati on Voltage & Collector Current
BE(sat)
V
125oC
25oC
Collector Current -IC (mA)
@ IC=10I
75oC
B
1000
CE(sat)
V
100
Satur ation Voltag e ( mV)
10
0.1 1 10 100 1000
B
@ IC=10I
75oC
125oC
25oC
Collector Current-IC (mA)
Capacitan ce & Reverse-Bia s ed Voltage
10
Sat uration Volta ge & C o llector Current
1000
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
1000
(mA)
C
100
Collec tor Current-I
Cutoff Fr equen cy ( M Hz)...
1
0.1
Cutoff Frequency & Collector Current
25oC
125oC
Collector Current-IC (mA)
Safe Operating Area
PT=1s
75oC
PT=100ms
VCE=10V
PT=1ms
Cob
Capacitance (pF)
1
0.1 1 10 100
1
(mA)
C
0.1
Collector Curr ent - I
Reverse- Biased Vol t ag e ( V)
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1s
0.01
10
1 10 100
1 10 100
Collector Current (mA)
Forward Voltage-VCE (V)
0.01
1 10 100
Forwar d Voltage- VCE (V)
HMBT1815 HSMC Product Specification
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