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HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT1015 is designe d for use in driver stage of AF amplifier a nd
general purpose amplification.
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperatur e........................................................................................... -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -50 - - V IC=-100uA
BVCEO -50 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA
ICBO - - -100 nA VCB=-50V
IEBO - - -100 nA VEB=-5V
*VCE(sat) - - -300 mV IC=-100mA, IB=-10mA
*VBE(sat) - - -1.1 V IC=-100mA, IB=-10mA
*hFE1 120 - 700 VCE=-6V, IC=-2mA
*hFE2 25 - - VCE=-6V, IC=-150mA
fT 80 - - MHz VCE=-10V, IC=-1mA, f=100MHz
Cob - - 7 pF VCB=-10V, f=1MHz, IE=0
(Ta=25°C)
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
SOT-23
Classification Of hFE1
Rank A4Y A4G A4B
Range 120-240 200-400 350-700
HMBT1015 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6804
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 2/3
1000
Current Gain & Collector Current
125oC
25oC
100
hFE
hFE @ VCE=6V
10
0.1 1 10 100 1000
10000
Sat ur at ion Voltage & Collector Current
BE(sat)
V
Collector Current-IC (mA)
@ IC=10I
75oC
B
1000
CE(sat)
V
100
Satur ation Volta g e ( m V)
10
0.1 1 10 100 1000
B
@ IC=10I
125oC
Collec tor Current-IC (mA)
75oC
25oC
Capa citance & Reverse- Biased Vol t age
10.00
Sat urati on Voltage & Col lector Current
1000
Saturat ion Volta ge ( m V)
100
0.1 1 10 100 1000
75oC
25oC
125oC
Collector Current -IC (mA)
Cutoff Frequency & Collector Curren t
1000
CE
100
10
Cutoff Frequency (MHz)...
=10
Cob
Capacitance (p F)
1.00
0.1 1 10 100
Reverse- Biased Voltage ( V)
Safe Operatin g Ar ea
1
PT=1ms
(mA)
C
PT=1s
0.1
Collector Current-I
PT=100ms
1
1 10 100 1000
Collector Current (mA)
0.01
1 10 100
Forwar d- Biase d Vol t age - VCE (V)
HMBT1015 HSMC Product Specification