HSMC HMBD914 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HMBD914

HIGH-SPEED SWITCHING DIODE

Description

The HMBD914 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The device is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 1/3

SOT-23

Absolute Maximum Ratings

• Maximum Temperatures

Stora ge Temperature........................................................................................................ -65 ~ +150 °C

Junction Temperature................................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)............................................................................................. 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Repetitive Peak Reverse Voltage.................................................................................................... 85 V

VR Coinuous Reverse Voltage........................................................................................................ 70 V

IF Continuous Forward Current................................................................................................... 200 mA

IFSM Peak Forward Surge Current............................................................................................. 500 mA

IFSM Non-Repetitive Peak Forward Current t=1uS ........................................................................... 4 A

IFSM Non-Repetitive Peak Forward Current t=1mS .......................................................................... 1 A

IFSM Non-Repetitive Peak Forward Current t=1S.......................................................................... 0.5 A

Characteristics (Ta=25°C)

Characteristic Symbol Condition Min Max Unit

Forward Voltage VF IF=10mA - 1 V
Reverse Breakdown Voltage VR IR=100uA 100 V

Reverse Current
Diode Capacitance Cd VR=0, F=1MHz - 1.5 pF
Reverse Recovery Time Trr

IR(1) VR=25V - 25 nA
IR(2) VR=75V - 5 uA

IF=IR=10mA, RL=100Ω
Measured at IR=1mA

-4ns

HMBD914 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 2/3

Forward Bias ed Voltage & Forward Current

450

300

(mA)

F

Current-I

150

0

0 500 1000 1500 2000

Forwar d Biased Voltage- VF (mV)

1

Capacitanc e- Cd (pF)

0.1

0.1 1 10 100

Capacitance & Reverse-Biased Voltage

Reverse- Biased Vol t age - VR (V)

HMBD914 HSMC Product Specification