HSMC HM965 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9511
Issued Date : 1996.04.12
Revised Date : 2002.10.01
Page No. : 1/3

HM965

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM965 is designed for use as AF output ampli fier an d gl ash unit.

Features

• Low VCE(sat)

• High performance at low supply voltage

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

SOT-89

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

BVCBO Collector to Base Voltage....................................................................................... 40 V

BVCEO Collector to Emitter Voltage.................................................................................... 20 V

BVEBO Emitter to Base Voltage............................................................................................ 7 V

IC Collector Current (Continuous)......................................................................................... 5 A

IC Collector Current (Peak PT=10mS).................................................................................. 8 A

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 40 - - V IC=100uA
BVCEO 20 - - V IC=1mA
BVEBO 7 - - V IE=10uA

ICBO - - 0.1 uA VCB=10V
IEBO - - 0.1 uA VEB=7V

*VCE(sat) - 0.35 1 V IC=3A, IB=0.1A

*hFE1 340 - 800 VCE=2V, IC=0.5A
*hFE2 150 - - VCE=2V, IC=2A

fT - 150 - MHz VCE=6V, IE=50mA

Cob - - 50 pF VCB=20V, f=1MHz

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classifications Of hFE1

Rank R S

Range 340-600 560-800

HM965 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE9511
Issued Date : 1996.04.12
Revised Date : 2002.10.01
Page No. : 2/3

10000

1000

HFE

100

10

125oC

25oC

75oC

hFE @ VCE=2V

10 100 1000 10000

Collector Current-IC (mA)

Capacitance & R everse- Biased Volta ge

100

Current Gain & Collector Current

1000

CE(sat)

V

100

Saturation Voltage (mV)

10

1 10 100 1000 10000

125oC

B

@ IC=30I

75oC

Collector Current-IC (mA)

25oC

Cutoff Frequency & Collector Current

1000

Sat urati on Voltage & Col lector Current

Capacitance (pF)

10

0.1 1 10 100

Reverse- Biased Vol t ag e ( V)

Cob

Safe Operating Area

100000

10000

(mA)

C

Collect or Curren t-I

1000

100

PT=1ms

PT=100ms

PT=1s

100

Cutoff Frequency (MHz)...

10

1 10 100 1000

VCE=6V

Collector Current (m A)

10

1 10 100

Forwar d Biased Voltage-VCE (V)

HM965 HSMC Product Specification