HSMC HM879 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HM879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V And 3V Electronic Flash Use.
Spec. No. : HM200203
Issued Date : 1996.07.01
Revised Date : 2002.02.26
Page No. : 1/3
Features
• Charger-up time is about 1 mS faster than of a germanium transistor.
• Small saturation voltage can bring less power dissipation and flashing times.
SOT-89
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)....................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage.................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Co ndition
BVCEO 10 - - V IC=1mA
BVEBO 6 - - V IE=10uA
BVCBO 30 - - V IC=10uA
BVCEX 20 - - V IC=1mA, VBE=3V
ICBO - - 100 nA VCB=20V
IEBO - - 100 nA VBE=4V
*VCE(sat) - 0.3 0.4 V IC=3A, IB=60mA
*hFE 140 210 400 VCE=2V, IC=3A
fT - 200 - MHz VCE=10V, IC=50mA
Cob - 30 - pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HM879 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HM200203
Issued Date : 1996.07.01
Revised Date : 2002.02.26
Page No. : 2/3
1000
Curren t Gain & Collector C urrent
125oC
75oC
25oC
hFE
hFE @ VCE=2V
100
1 10 100 1000 10000
1000
100
Collector Current-IC (mA)
Cutoff Frequency & Collector Current
VCE=10V
1000
100
Saturation Voltage (mV)
10
100
Sat urati on Voltage & Col lector C urr ent
CE(sat)
V
1 10 100 1000 10000
B
@ IC=50I
75oC
125oC
Collector Current-IC (mA)
25oC
Capacitance & Reverse-Biased Voltage
Cob
10
Cutoff Frequency (MHz)...
1
1 10 100 1000
Collector Current (mA)
10
Capacitance (pF)
1
1 10 100
Reverse Biased Vol t age ( V)
HM879 HSMC Product Specification
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