HSMC HM772 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HM772

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HM772 is designed for use in output stage of amplifier, voltage
regulator, DC-DC converter and driver.

Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 1/5

Absolute Maximum Ratings

SOT-89

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ........................................................................... 0.5 W

Total Power Dissipation (Ta=25°C)............................................................................... 2 W

Total Power Dissipation (Tc=25°C)............................................................................... 1 W

Total Power Dissipation (Tc=25°C)............................................................................... 4 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage........................................................................................ -40 V

VCEO Collector to Emitter Voltage..................................................................................... -30 V

VEBO Emitter to Base Voltage............................................................................................. -5 V

IC Collector Current (continuous)......................................................................................... -3 A

IC Collector Current (pulse).......................................................................................... -7 A

Thermal Characteristic

Characteristic Symbol Max. Unit

Thermal Resistance, junction to ambient
Thermal Resistance, junction to ambient
Thermal Resistance, junction to case
Thermal Resistance, junction to case

(Note1)

(Note2)

(Note1)

(Note2)

Rθja
Rθja
Rθjc
Rθjc

250

62.5
125

31.25

o

C/W

o

C/W

o

C/W

o

C/W

(Note1)
(Note2)
(Note1)
(Note2)

(Note3)

Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Note3: Single pulse PW=1ms

HM772 HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -40 - - V IC=-100uA
BVCEO -30 - - V IC=-1mA
BVEBO -5 - - V IE=-10uA

ICBO - - -1 uA VCB=-30V

IEBO - - -1 uA VEB=-3V
*VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.2A
*VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A

*hFE1 30 - - VCE=-2V, IC=-20mA
*hFE2 100 160 500 VCE=-2V, IC=-1A

fT - 80 - MHz VCE=-5V, IC=-100mA, f=100MHz

Cob - 55 - pF VCB=-10V, f=1MHz

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Spec. No. : HE9515
Issued Date : 1997.06.05
Revised Date : 2003.01.10
Page No. : 2/5

Classification Of hFE2

Rank Q P E

Range 100-200 160-320 250-500

HM772 HSMC Product Specification