HSMC HM44 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9524-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 1/3
HM44
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM44 is designed for application requires high voltage.
Features
High voltage: VCEO=400V(min) at IC=1mA
•
High current gain: IC=300mA at 25°C
•
Complementary with HM94
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e...................................................................................... 400 V
VCEO Collector to Emitter Voltage ................................................................................... 400 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 300 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 400 - - V IC=100uA
BVCEO 400 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICBO - - 100 nA VCB=400V
IEBO - - 100 nA VEB=4V
ICES - - 500 nA VCE=400V
*VCE(sat)1 - - 375 mV IC=20mA, IB=2mA
*VCE(sat)2 - - 750 mV IC=50mA, IB=5mA
*VBE(sat) - - 750 mV IC=10mA, IB=1mA
*hFE1 40 - - VCE=10V, IC=1mA
*hFE2 50 - 300 VCE=10V, IC=10mA
*hFE3 45 - - VCE=10V, IC=50mA
*hFE4 40 - - VCE=10V, IC=100mA
Cob - 4 6 pF VCB=20V, f=1MHz
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9524-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 2/3
1000
100
hFE
10
1
0.1 1 10 100 1000 10000
hFE @ VCE=10V
Collector Current (mA)
Capacit an ce & R everse-Biased Voltage
100
10
Current Gain & Collector Current
100000
10000
1000
BE(sat)
V
Saturation Voltage (mV)
100
CE(sat)
V
10
0.1 1 10 100 1000 10000
Collector Current (mA)
@ IC=10I
@ IC=10I
B
B
Sa fe Operati ng Area
10000
1000
(mA)
C
100
Saturation Volt age & Col lector C ur rent
PT=1ms
Capacitance (pF)
Cob
1
0.1 1 10 100
Reverse- Biased Vol tage (V)
Collector Current-I
10
1
1 10 100 1000
Forwar d Voltage- VCE (V)
PT=100ms
PT=1s
HSMC Product Specification
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