HSMC HM42 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9510-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3

HM42

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HM42 is designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics telephone.

Absolute Maximum Ratings

Maximum Temperatures

•

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

Maximum Power Dissipation

•

Total Power Dissipation (Ta=25°C)...................................................................................... 1 W

Maximum Voltages and Currents (Ta=25°C)

•

VCBO Collector to Base Voltag e...................................................................................... 300 V

VCEO Collector to Emitter Voltage ................................................................................... 300 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ...................................................................................................... 500 mA

Characteristics

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 300 - - V IC=100uA
BVCEO 300 - - V IC=1mA
BVEBO 6 - - V IE=10uA

ICBO - - 100 nA VCB=260V

IEBO - - 100 nA VEB=6V
*VCE(sat) - - 500 mV IC=20mA, IB=2mA
*VBE(sat) - - 900 mV IC=20mA, IB=2mA

*hFE1 25 - - VCE=10V, IC=1mA
*hFE2 40 - - VCE=10V, IC=10mA
*hFE3 40 - - VCE=10V, IC=30mA

fT 50 - - MHz VCE=20V, IC=10mA, f=100MHz

Cob - 3 - pF VCB=20V

(Ta=25°C)

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

HI-SINCERITY

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE9510-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 2/3

1000

100

hFE

10

1

0.1 1 10 100 1000

Collector Curren t ( mA)

VCE=10V

Capacitance & Reverse-Biased Voltage

100

Current Gain & Collector Current

10000

Saturation Volt age & Col lector Current

1000

BE(sat)

V

100

Satu r ation Vol tage (m V)

10

0.1 1 10 100 1000

CE(sat)

V

Collector Curren t ( mA)

Cutoff Frequency & I

1000

@ IC=10I

@ IC=10I

B

B

C

10

Capac itance (pF)

Cob

1

0.1 1 10 100 1000

Reverse Biased Vol tage (V)

Safe Operating Area

10000

PT=1ms

PT=100ms

PT=1s

10

(mA)

C

Collector Curren t- I

1000

100

100

VCE=20V

Cutoff Frequency (MHz)

10

1 10 100

Collector Curren t ( mA)

1

1 10 100

Forwar d Biased Vol tage-VCE (V)

HSMC Product Specification