HSMC HM3904 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9504-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM3904 is designed for general purpose switching and
amplifier applicati ons.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e........................................................................................ 60 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 200 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 60 - - V IC=100uA
BVCEO 40 - - V IC=1mA
BVEBO 6 - - V IE=10uA
ICEX - - 50 nA VCE=30V, VBE=3V
*VCE(sat)1 - - 200 mV IC=10mA, IB=1mA
*VCE(sat)2 - - 300 mV IC=50mA, IB=5mA
*VBE(sat)1 650 - 850 mV IC=10mA, IB=1mA
*VBE(sat)2 - - 950 mV IC=50mA, IB=5mA
*hFE1 40 - - VCE=1V, IC=100uA
*hFE2 70 - - VCE=1V, IC=1mA
*hFE3 100 - 300 VCE=1V, IC=10Ma
*hFE4 60 - - VCE=1V, IC=50mA
*hFE5 30 - - VCE=1V, IC=100mA
fT 300 - - MHz VCE=20V, IC=10mA, f=100MHz
Cob - - 4 pF VCB=5V , f=1M H z
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HE9504-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 2/3
1000
Curren t Ga in & C ollector Cu rrent
VCE=3V
100
hFE
VCE=1V
10
0.1 1 10 100 1000
10
Capa citance & Rev er se- Biased Vol t age
Collector Curren t ( m A )
10000
1000
BE(sat)
V
100
Satu r ation Vol tage (mV)
CE(sat)
V
10
0.1 1 10 100 1000
Collector Curren t ( m A )
@ IC=10I
@ IC=10I
B
Cut o ff Fr equency & Collector Current
1000
VCE=20V
Satur ation Voltage & Collector Cu rrent
B
1
Capac itan c e (pF)
0.1
0.1 1 10 100
10000
1000
(mA)
C
100
Collector Curren t- I
10
Reverse Biased Vol t age ( V)
Safe Operating Area
Cob
PT=1ms
PT=100ms
PT=1s
100
Cutoff Frequency (MHz)
10
0.1 1 10 100
Collector Curren t ( m A )
1
1 10 100
Forwar d Biased Vol tage-VCE (V)
HSMC Product Specification
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