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HI-SINCERITY
MICROELECTRONICS CORP.
HM2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM2907A is designed for general purpose amplifier and high
speed, medium-power switching applications.
Spec. No. :HE9520
Issued Date : 1997.06.18
Revised Date : 2002.04.10
Page No. : 1/3
Features
• Low collector saturation voltage
• High speed switching
• For complementary use with NPN type HM2222A
SOT-89
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -60 V
VCEO Collector to Emitter Voltage..................................................................................... -60 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -600 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-10uA
BVCEO -60 - - V IC=-10mA
BVEBO -5 - - V IC=-10uA
ICBO - - -10 nA VCB=-50V
ICEX - - -50 nA VCE=-30V, VBE= - 0. 5V
*VCE(sat)1 - -0.2 -0.4 V IC=-150mA, IB=-15mA
*VCE(sat)2 - -0.5 -1.6 V IC=-500mA, IB=-50mA
*VBE(sat)1 - - -1.3 V IC=-150mA, IB=-15mA
*VBE(sat)2 - - -2.6 V IC=-500mA, IB=-50mA
*hFE1 75 - - VCE=-10V, IC=-100uA
*hFE2 100 - - VCE=-10V, IC=-1mA
*hFE3 100 - - VCE=-10V, IC=-10mA
*hFE4 100 - 300 VCE=-10V, IC=-150mA
*hFE5 50 - - VCE=-10V, IC=-500mA
fT 200 - - MHz VCE=-20V, IC=-50mA, f=100MHz
Cob - - 8.0 pF VCB=-10V , f= 1M H z
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HM2907A HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. :HE9520
Issued Date : 1997.06.18
Revised Date : 2002.04.10
Page No. : 2/3
1000
Cur ren t Ga in & C ollector Cu rrent
125oC
100
hFE
10
0.1 1 10 100 1000
10000
25oC
Collec tor Current-IC (mA)
Sat urat ion Vol tage & Collect or Cu rrent
BE(sat)
V
@ IC=10I
75oC
hFE @ VCE=10V
B
10000
CE(sat)
V
1000
100
Satur ation Voltag e (mV)
10
0.1 1 10 100 1000
125oC
B
@ IC=10I
75oC
Collector Current-IC (mA)
Capa citance & Rev er se-Bia sed Vol t age
100
Sat urati on Voltage & Col lector Current
25oC
1000
Saturat ion Volta ge ( m V)
100
0.1 1 10 10 0 1000
25oC
125oC
Collector Current-IC (mA)
75oC
Cutoff Frequency & Collector Current
1000
VCE=20V
100
Cutoff Fr eque ncy ( M Hz)...
10
Capacitance (pF)
Cob
1
0.1 1 10 100
Reverse Biased Vol t ag e ( V)
Sa fe Op era ting Area
10000
PT=1ms
1000
Collector Curr ent ( m A
PT=100ms
PT=1s
100
10
10
1 10 100
Collector Current (mA)
1
1 10 100
Forwar d Biased Volatge ( V)
HM2907A HSMC Product Specification