HSMC HM28S Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6450
Issued Date : 1992.11.25
Revised Date : 2002.04.18
Page No. : 1/3
HM28S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM28S is a NPN silicon transistor, designed for use in general-purpose
SPEECH SYNTHSIZER (Voice Rom) IC audio output driver stage amplifier
applications.
TO-92
Features
• Excellent hFE Linearity
• High DC Current Gain
• High Power Dissipation
Absolute Maximum Ratings
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................. 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage..................................................................................................... 40 V
VCEO Collector to Emitter Voltage ................................................................................................. 20 V
VEBO Emitter to Base Voltage.......................................................................................................... 6 V
IC Collector Current ..................................................................................................................... 1.25 A
IB Base Current ............................................................................................................................. 0.4 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 40 - - V IC=100uA, IE=0
BVCEO 20 - - V IC=1mA, IB=0
BVEBO 6 - - V I E= 100uA, IC=0
ICBO - - 100 nA VCB=35V, IE=0
IEBO - - 100 nA VEB=6V, IC=0
*VCE(sat) - - 0.55 V IC=600mA, IB=2 0mA
*hFE1 290 - - VCE=1V, IC=1mA
*hFE2 300 - 1000 VCE=1V, IC=0.1A
hFE3 300 - - VCE=1V, IC=0.3A
hFE4 300 - - VCE=1V, IC=0.5A
fT 100 - - MHz VCE=10V, IC=50mA, f=1MHz
Cob - 9 - pF VCB=10V, f=1MHz, IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank B C D
Range 300-550 500-700 650-1000
HM28S HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6450
Issued Date : 1992.11.25
Revised Date : 2002.04.18
Page No. : 2/3
1000
hFE
100
0.1 1 10 100 1000
100
Current Gai n & Collector Current
125oC
75oC
25oC
hFE @ VCE=1V
Collector Current-IC (mA)
Capacitance & Rev erse-Biased Volta ge
1000
Sat urati on Voltage & Col lector Current
CE(sat)
V
100
Satur ation Voltage ( m V)
10
0.1 1 10 100 1000
1000
100
Cut off Fr equency & Collector Current
B
@ IC=30I
75oC
125oC
Collect o r Current- IC (mA)
fT
25oC
10
Capacitance (pF)
1
0.1 1 10 100 1000
10000
1000
(mA)
C
100
Collect or Current - I
10
1
1 10 100
Reverse Biased Volt age (V)
Safe Operating Area
Forwar d Biased Vol tage-VCE (V)
Cob
PT=1ms
PT=100ms
PT=1s
10
Cutoff Frequency (MHz)...
1
1 10 100 1000
Collector Current (mA) -VCE=10V
Power Derating
900
800
700
600
500
400
300
Power Dis s ip ation- PD(mW)
200
100
0
0 50 100 150 200
Ambient Temper a t ure-Ta (oC)
HM28S HSMC Product Specification
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